GaN Epitaxy

Semicorex provides custom thin film HEMT (Gallium nitride) GaN epitaxy on Si/SiC/GaN substrates. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.

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Product Description

Gallium Nitride GaN epitaxy is a wide-bandgap semiconductor material with excellent electrical and optical properties, making it a promising candidate for various electronic and optoelectronic devices.

GaN epitaxy has revolutionized the development of GaN-based devices, including high-power electronics, solid-state lighting (LEDs), and high-frequency devices. The ability to grow high-quality GaN epitaxial layers with precise control over material properties has significantly improved the performance, efficiency, and reliability of GaN devices, contributing to advancements in various industries, such as power electronics, telecommunications, and consumer electronics.