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China Liquid Phase Epitaxy Manufacturers, Suppliers, Factory

In the past few years, our firm absorbed and digested highly developed technologies equally at home and abroad. Meanwhile, our business staffs a group of experts devoted on the growth of Liquid Phase Epitaxy,SiC Coated for Epitaxial Growth,SiC Coated Susceptor for LPE,Graphite Barrel Susceptor,SiC Coated for LPE, We warmly welcome pals from all walks of everyday living to cooperate with us.
Liquid Phase Epitaxy, Our products are very popular in the word, like South American, Africa, Asia and so on. Companies to "create first-class products" as the goal, and strive to provide customers with high quality products, provide high-quality after-sales service and technical support, and customer mutual benefit, create a better career and future!

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    In the landscape of wide bandgap semiconductor materials, silicon carbide (SiC) has emerged as a highly regarded material, particularly excelling in the high-power conversion domain.

  • What is CVD process in semiconductor?

    Chemical vapor deposition CVD refers to the introduction of two or more gaseous raw materials into a reaction chamber under vacuum and high temperature conditions, where the gaseous raw materials react with each other to form a new material, which is deposited on the wafer surface.

  • Final polishing of the silicon wafer surface

    To achieve the high-quality requirements of IC chip circuit processes with line widths smaller than 0.13μm to 28nm for 300mm diameter silicon polishing wafers, it is essential to minimize contamination from impurities, such as metal ions, on the wafer's surface.

  • Introducing Gallium Oxide(Ga2O3)

    Gallium oxide (Ga2O3) as an "ultra-wide bandgap semiconductor" material has garnered sustained attention. Ultra-wide bandgap semiconductors fall under the category of "fourth-generation semiconductors," and in comparison to third-generation semiconductors such as silicon carbide (SiC) and gallium nitride (GaN), gallium oxide boasts a bandgap width of 4.9eV, surpassing silicon carbide's 3.2eV and gallium nitride's 3.39eV. A wider bandgap implies that electrons require more energy to transition from the valence band to the conduction band, endowing gallium oxide with characteristics like high voltage resistance, high-temperature tolerance, high power capability, and radiation resistance.

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    Common thin films are mainly divided into three categories: semiconductor thin films, dielectric thin films, and metal/metal compound thin films.

  • TSMC: 2nm process risk trial production next year

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Liquid Phase Epitaxy (LPE) Reactor System

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