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  • SiC Ceramic Heat Transfer Plates

    SiC Ceramic Heat Transfer Plates

    Semicorex SiC Ceramic Heat Transfer Plates, based on SiC as the primary material, undergo high-temperature sintering at 2250°C, resulting in a highly vitrified, zero-porosity dense ceramic body with an SiC content of ≥99.3%. Exhibiting a bending strength of ≥410MPa and a thermal conductivity of 140W/m.k, these ceramics are the only materials capable of withstanding corrosion from strong acids such as hydrofluoric acid (HF) and sulfuric acid (H2SO4) in the semiconductor industry. We at Semicorex are dedicated to manufacturing and supplying high-performance SiC Ceramic Heat Transfer Plates that fuse quality with cost-efficiency. **
  • Glass-like Carbon Coated Rigid Felt

    Glass-like Carbon Coated Rigid Felt

    The Glass-like Carbon Coated Rigid Felt, a signature product of Semicorex,consists of a Carbon Fiber rigid felt substrate enveloped by a glass-like carbon coating, combining the inherent strength of the felt with the exceptional surface properties of the glass-like carbon. Together, they create a material that stands out for its performance under extreme conditions.**
  • Graphite Heater For Hot Zone

    Graphite Heater For Hot Zone

    Semicorex Graphite Heater For Hot Zone, designed to operate reliably within high-temperature furnaces, are engineered to withstand the challenging conditions inherent to processes like chemical vapor deposition (CVD), epitaxy, and high-temperature annealing. We at Semicorex are dedicated to manufacturing and supplying high-performance Graphite Heater For Hot Zone that fuses quality with cost-efficiency.**
  • RTP Ring

    RTP Ring

    Semicorex RTP Ring is a SiC-coated graphite ring designed for high-performance applications in Rapid Thermal Processing (RTP) systems. Choose Semicorex for our advanced material technology, ensuring superior durability, precision, and reliability in semiconductor manufacturing.*
  • TaC-Coating Crucible

    TaC-Coating Crucible

    Semicorex TaC-Coating Crucible has emerged as an essential tool in the pursuit of high-quality semiconductor crystals, enabling advancements in material science and device performance. The TaC-Coating Crucible's unique combination of properties makes them ideally suited for the demanding environments of crystal growth processes, offering distinct advantages over traditional materials.**
  • Pyrolytic Boron Nitride Heaters

    Pyrolytic Boron Nitride Heaters

    Semicorex Pyrolytic Boron Nitride Heaters represent the pinnacle of performance and reliability in the realm of high-temperature applications. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • Related Blog
  • Reviews

  • TaC coating with CVD method

    Tantalum carbide coating is an important high-strength, corrosion-resistant and chemically stable high-temperature structural material with a melting point of up to 4273 °C, one of the several compounds with the highest temperature resistance. It has excellent high-temperature mechanical properties, resistance to high-speed airflow scouring, ablation resistance, and good chemical and mechanical compatibility with graphite and carbon/carbon composites. Therefore, in the epitaxial process of GaN LEDs and SiC power devices such as MOCVD, TaC coating has excellent acid and alkali resistance to H2, HCl, NH3, which can completely protect the graphite substrate material and purify the growth environment.

  • What is Low Temperature Plasma Etching?

    Plasma is the fourth state of matter, and it plays a crucial role in both industrial applications and natural phenomena.

  • Application of carbon fiber composite

    Carbon fiber (CF) is a type of fibrous material that contains over 95% carbon.

  • Ion Implant and Diffusion Process

    Ion implantation is a method of semiconductor doping and one of the main processes in semiconductor manufacturing.

  • What Applications of Gallium Nitride (GaN) Substrate?

    Gallium Nitride (GaN) is an important material in semiconductor technology, known for its exceptional electronic and optical properties. GaN, as a wide-bandgap semiconductor, has a bandgap energy of approximately 3.4 eV, making it ideal for high-power and high-frequency applications.

  • Monocrystalline silicon vs. polycrystalline silicon

    Single crystal silicon and polycrystalline silicon each have their own unique advantages and applicable scenarios. Single crystal silicon is suitable for high-performance electronic products and microelectronics due to its excellent electrical and mechanical properties. Polycrystalline silicon, on the other hand, dominates the field of solar cells due to its low cost and good photoelectric conversion efficiency.

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GaN EpitaxySiC Coating for GaN EpitaxySiC-Coated Susceptor for GaN EpitaxySilicon Based Gan EpitaxySilicon-Based GaN Epitaxy

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