Home > Products > Wafer > SiC Substrate > 4" 6" 8" N-type SiC Ingot
4

4" 6" 8" N-type SiC Ingot

Semicorex provides N-type SiC ingot with 4 inches, 6 inches and 8 inches. We have been manufacturer and supplier of wafers for many years. Our 4" 6" 8" N-type SiC Ingot has a good price advantage and cover most of the European and American markets. We look forward to becoming your long-term partner in China.

Send Inquiry

Product Description
Semicorex provides 4" 6" 8" N-type SiC Ingot. We have been manufacturer and supplier of wafers for many years.

4 Inch N-type SiC Ingot Specification

Items

Production Grade

Dummy Grade

Polytype

4H

Dopant

n-type Nitrogen

Resistivity

0.015~0.025 ohm ·cm

0.015~0.028 ohm ·cm

Diameter

100.25±0.25 mm

Thickness

≥15 mm

Surface orientation error

4°toward<11-20>±0.2°

Primary flat orientation

[1- 100]±5.0°

Primary flat length

32.5±1.5 mm

Secondary flat

90.0°CW from Primary ±5.0°, silicon face up

Secondary flat length

18±1.5 mm

Micropipe density

≤0.5 ea/cm2

≤10 ea/cm2

BPD

≤2000 ea/cm2

--

TSD

≤500 ea/cm2

--

Edge Cracks

≤3 ea,≤1mm/ea

≤5 ea,≤3mm/ea

Polytype areas

None

≤5% area

Edge indents

≤3 ea,≤1mm width and depth

≤5 ea,≤2mm width and depth

Label

C-face

Packaging

unit-ingot cassette, vacuum packaging

6 Inch N-type SiC Ingot Specification

Items

Production Grade

Dummy Grade

Polytype

4H

Dopant

n-type Nitrogen

Resistivity

0.015~0.025

0.015~0.028

Diameter

150.25±0.25 mm

Thickness

≥15 mm

Surface orientation error

4°toward<11-20>±0.2°

Primary flat orientation

[1- 100]±5.0°

Primary flat length

47.5±1.5 mm

Micropipe density

≤0.5 ea/cm2

≤10 ea/cm2

BPD

≤2000 ea/cm2

--

TSD

≤500 ea/cm2

--

Edge Cracks

≤3 ea,≤1mm/ea

≤5 ea,≤3mm/ea

Polytype areas

None

≤5% area

Edge indents

≤3 ea,≤1mm width and depth

≤5 ea,≤2mm width and depth

Label

C-face

Packaging

unit-ingot cassette, vacuum packaging

8 Inch N-type SiC Ingot Specification

Items

Production Grade

Research Grade

Dummy Grade

Polytype

4H

Dopant

n-type Nitrogen

Resistivity

0.015~0.028

0.01~0.04

NA

Diameter

200.25±0.25 mm

Thickness

NA

Surface orientation error

4°toward<11-20>±0.5°

Notch orientation

[1- 100]±5.0°

Notch depth

1~1.5 mm

Micropipe density

≤2 ea/cm2

≤10 ea/cm2

≤50 ea/cm2

BPD

≤2000 ea/cm2

≤500 ea/cm2

--

TSD

≤500 ea/cm2

≤1000 ea/cm2

--

Edge Cracks

≤3 ea,≤1mm/ea

≤4 ea,≤2mm/ea

≤5 ea,≤3mm/ea

Polytype areas

None

≤20% area

≤30% area

Edge indents

≤3 ea,≤1mm width and depth

≤4 ea,≤2mm width and depth

≤5 ea,≤2mm width and depth

Label

C-face

Packaging

unit-ingot cassette, vacuum packaging




Hot Tags: 4" 6" 8" N-type SiC Ingot, China, Manufacturers, Suppliers, Factory, Customized, Bulk, Advanced, Durable
Related Category
Send Inquiry
Please feel free to give your inquiry in the form below. We will reply you in 24 hours.
X
We use cookies to offer you a better browsing experience, analyze site traffic and personalize content. By using this site, you agree to our use of cookies. Privacy Policy
Reject Accept