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  • Epitaxy Silicon-Based GaN

    • China Epitaxy Silicon-Based GaN Manufacturers, Suppliers, Factory

    Semicorex has been producing Epitaxy Silicon-Based GaN for many years and is one of the professional Epitaxy Silicon-Based GaN manufacturers and Suppliers in China. Once you buy our advanced and durable products which supply bulk packing, we guarantee the large quantity in quick delivery. Over the years, we have provided customers with customized service. Customers are satisfied with our products and excellent service. We sincerely look forward to becoming your reliable long-term business partner! Welcome to buy products from our factory.

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    • Crucibles for Crystal Growth

      Crucibles for Crystal Growth

      Semicorex Crucibles for Crystal Growth are indispensable in achieving controlled single-crystal growth, fundamental for semiconductor device manufacturing. These crucibles are meticulously designed to fulfill the rigorous standards of the semiconductor sector, ensuring peak performance and efficiency across all applications. We at Semicorex are dedicated to manufacturing and supplying high-performance Crucibles for Crystal Growth that fuse quality with cost-efficiency.
    • CVD SiC Etching Ring Silicon Carbide

      CVD SiC Etching Ring Silicon Carbide

      Semicorex provide high-quality CVD SiC Etching Ring Silicon Carbide with customized service. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
    • TaC Coated Tube

      TaC Coated Tube

      Semicorex TaC Coated Tube represents a pinnacle of material science, engineered to withstand the extreme conditions encountered in advanced semiconductor fabrication. Created by applying a dense, uniform layer of TaC onto a high-purity isotropic graphite substrate via Chemical Vapor Deposition (CVD), the TaC Coated Tube offers a compelling combination of properties that surpass conventional materials in demanding high-temperature and chemically aggressive environments.**
    • 4

      4" 6" 8" N-type SiC Ingot

      Semicorex provides N-type SiC ingot with 4 inches, 6 inches and 8 inches. We have been manufacturer and supplier of wafers for many years. Our 4" 6" 8" N-type SiC Ingot has a good price advantage and cover most of the European and American markets. We look forward to becoming your long-term partner in China.
    • Carbon Carbon Composite

      Carbon Carbon Composite

      Semicorex provide high-quality carbon carbon composite with customized service. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
    • Monocrystalline Silicon Wafer Susceptor

      Monocrystalline Silicon Wafer Susceptor

      Semicorex Monocrystalline Silicon Wafer Susceptor is the ideal solution for graphite epitaxy and wafer handling processes. Our ultra-pure product ensures minimal contamination and exceptional long-life performance, making it a popular choice in many European and American markets. As a leading provider of semiconductor wafer carriers in China, we look forward to becoming your long-term partner.
    • Related Blog
    • Reviews

    • What are epitaxial wafers used for?

      Epitaxial wafers have been used in the electronics industry for decades, but their importance has only increased as technology has advanced. In this article, we will explore what epitaxial wafers are and why they are such an essential component of modern electronics.

    • Monocrystalline Silicon Manufacturing

      The three primary methods used in monocrystalline silicon manufacturing are the Czochralski (CZ) method, the Kyropoulos method, and the Float Zone (FZ) method.

    • Porous Graphite for High Quality SiC Crystal Growth by PVT Method

      Silicon Carbide (SiC) has emerged as a key material in the field of semiconductor technology, offering exceptional properties that make it highly desirable for various electronic and optoelectronic applications. The production of high-quality SiC single crystals is crucial for advancing the capabilities of devices such as power electronics, LEDs, and high-frequency devices. In this article, we delve into the significance of porous graphite in the Physical Vapor Transport (PVT) method for 4H-SiC single crystal growth.

    • Oxidation in Semiconductor Processing

      Oxidation processes play a critical role in preventing such problems by creating a protective layer on the wafer, known as the oxide layer, which acts as a barrier between different chemicals.

    • Ion Implant and Diffusion Process

      Ion implantation is a method of semiconductor doping and one of the main processes in semiconductor manufacturing.

    • Main steps in SiC substrate processing

      The processing of 4H-SiC substrate mainly includes the following steps:

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