What is P-type SiC wafer?

A P-type silicon carbide (SiC) wafer is a semiconductor substrate that is doped with impurities to create a P-type (positive) conductivity. Silicon carbide is a wide-bandgap semiconductor material that offers exceptional electrical and thermal properties, making it suitable for high-power and high-temperature electronic devices.

In the context of SiC wafers, "P-type" refers to the type of doping used to modify the conductivity of the material. Doping involves intentionally introducing impurities into the crystal structure of the semiconductor to alter its electrical properties. In the case of P-type doping, elements with fewer valence electrons than silicon (the base material for SiC) are introduced, such as aluminum or boron. These impurities create "holes" in the crystal lattice, which can act as charge carriers, resulting in a P-type conductivity.

P-type SiC wafers are essential for fabricating various electronic components, including power devices like metal-oxide-semiconductor field-effect transistors (MOSFETs), Schottky diodes, and bipolar junction transistors (BJTs). They are typically grown using advanced epitaxial growth techniques and are further processed to create specific device structures and features required for different applications.