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    Semicorex is your partner for advanced graphite components and assemblies to support higher throughput and better yields in your semiconductor processing equipment. Our materials experts are ready to work with you to develop the optimal right solution for your wafer handling, heating, and processing requirements. Our Ceramic End Effector has a good price advantage and cover many of the European and American markets. We look forward to becoming your long-term partner in China.
  • 8 Inch N-type SiC Wafer

    8 Inch N-type SiC Wafer

    Semicorex provides various types of 4H and 6H SiC wafers. We have been manufacturer and supplier of wafers for many years. Our 8 Inch N-type SiC Wafer has a good price advantage and cover most of the European and American markets. We look forward to becoming your long-term partner in China.
  • Isostatic Graphite Crucible

    Isostatic Graphite Crucible

    Semicorex Isostatic Graphite Crucible is a specialized vessel used in the thermal processing of semiconductor materials, particularly in the production of monocrystals. It plays a crucial role in the controlled growth of single-crystal structures essential for semiconductor device fabrication. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • 8-inch Quartz Thermos Bucket

    8-inch Quartz Thermos Bucket

    Semicorex 8-inch Quartz Thermos Bucket, a pinnacle of precision engineering tailored specifically for the semiconductor industry. Designed to safeguard and maintain the integrity of 8-inch wafers during transport and storage, this 8-inch Quartz thermos bucket combines cutting-edge materials with meticulous craftsmanship to meet the stringent demands of modern semiconductor fabrication facilities. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • Si Substrate

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    Semicorex Si Substrate is designed with precision and reliability to meet the exacting standards of semiconductor manufacturing. Choosing Semicorex means choosing a substrate that is meticulously crafted to deliver consistent performance across all applications. Our Si Substrate undergo rigorous quality control, ensuring minimal impurities and defects, and are available in custom specifications to match the needs of cutting-edge technology.*
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    The CVD process for SiC wafer epitaxy involves the deposition of SiC films onto a SiC substrate using a gas-phase reaction. The SiC precursor gases, typically methyltrichlorosilane (MTS) and ethylene (C2H4), are introduced into a reaction chamber where the SiC substrate is heated to a high temperature (usually between 1400 and 1600 degrees Celsius) under a controlled atmosphere of hydrogen (H2).

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    Heat treatment is one of the essential and important processes in the semiconductor process. Thermal process is the process of applying thermal energy to a wafer by placing it in an environment filled with a specific gas, including oxidation/diffusion/annealing, etc.

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    The ultra-high synthesis temperature and the difficulty of achieving dense sintering of SiC ceramics have limited their development. The sintering process is crucial for SiC ceramics.

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