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abide by the contract, conforms on the market requirement, joins from the market competition by its good quality likewise as provides more comprehensive and superb support for customers to let them become large winner. The pursue of the company, is definitely the clients' pleasure for alumina ceramic,wafer end effector,alumina ceramic arm in china,Wafer Handling,alumina ceramic manufacturers, We warmly welcome buddies from all walks of everyday living to hunt mutual cooperation and build a more brilliant and splendid tomorrow.
alumina ceramic, We rely on high-quality materials, perfect design, excellent customer service and the competitive price to win the trust of many customers at home and abroad. 95%products are exported to overseas markets.

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  • Durable SiC-Coated Barrel Susceptor

    Durable SiC-Coated Barrel Susceptor

    With its excellent density and thermal conductivity, the Semicorex Durable SiC-Coated Barrel Susceptor is the ideal choice for use in epitaxial processes and other semiconductor manufacturing applications. Its high-purity SiC coating provides superior protection and heat distribution properties, making it the go-to choice for reliable and consistent results.
  • RTP/RTA SiC Coating Carrier

    RTP/RTA SiC Coating Carrier

    Semicorex RTP/RTA SiC Coating Carrier is engineered to withstand the toughest conditions of the deposition environment. With its high heat and corrosion resistance, this product is designed to provide optimal performance for epitaxial growth. The SiC coated carrier has a high thermal conductivity and excellent heat distribution properties, ensuring reliable performance for RTA, RTP, or harsh chemical cleaning.
  • SiC Coated MOCVD Susceptor

    SiC Coated MOCVD Susceptor

    Semicorex is a leading manufacturer and supplier of SiC Coated MOCVD Susceptor. Our product is specially designed for semiconductor industries to grow the epitaxial layer on the wafer chip. The high purity Silicon Carbide coated graphite carrier is used as the center plate in MOCVD, with a gear or ring-shaped design. Our susceptor is widely used in MOCVD equipment, ensuring high heat and corrosion resistance, and great stability in extreme environments.
  • TaC Coating Guide Ring

    TaC Coating Guide Ring

    Semicorex TaC Coating Guide Ring serves as a paramount part within metal-organic chemical vapor deposition (MOCVD) equipment, ensuring the precise and stable delivery of precursor gases during the epitaxial growth process. The TaC Coating Guide Ring represents a series of properties that make it ideal for withstanding the extreme conditions found within the MOCVD reactor chamber.**
  • SiC Ceramic Seal Part

    SiC Ceramic Seal Part

    Semicorex SiC Ceramic Seal Part stands as a testament to cutting-edge materials science and engineering prowess, designed to meet the exacting demands of high-performance mechanical sealing applications across a variety of industries.**
  • SiC Vacuum Chucks

    SiC Vacuum Chucks

    Semicorex SiC Vacuum Chucks are high-performance ceramic fixture designed for secure wafer adsorption in semiconductor manufacturing. With superior thermal, mechanical, and chemical properties, it ensures stability and precision in demanding process environments.*
  • Related Blog
  • Reviews

  • What is the advantage of silicon carbide?

  • Why choose liquid phase epitaxy method?

    Compared with the PVT method, the liquid phase method for growing SiC has the following advantages:

  • Dry Etching vs Wet Etching

    In semiconductor fabrication, etching is one of the major steps, along with photolithography and thin-film deposition. It involves removing unwanted materials from the surface of a wafer using chemical or physical methods. This step is carried out after coating, photolithography, and developing. It is used to remove the exposed thin film material, leaving only the desired portion of the wafer, and then removing the excess photoresist. These steps are repeated numerous times to create complex integrated circuits.

  • What are the challenges of silicon carbide substrate production?

    Silicon carbide (SiC) is a material that possesses high bond energy, similar to other hard materials like diamond and cubic boron nitride. However, the high bond energy of SiC makes it difficult to crystallize directly into ingots via traditional melting methods. Therefore, the process of growing silicon carbide crystals involves the use of vapor phase epitaxy technology.

  • What is Thermal Field?

    In the field of single crystal growth, the temperature distribution within the crystal growth furnace plays a critical role. This temperature distribution, commonly referred to as the thermal field, is a vital factor that influences the quality and characteristics of the crystal being grown. The thermal field can be categorized into two types: static and dynamic.

  • Etching Process Parameters

    Etching is a critical step in chip manufacturing, used to create minute circuit structures on silicon wafers.

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