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    • China alumina oxide ceramic;ceramic flange;alumina al2o3;flange;white alumina;alumina ceramic material;alumina machining;alumina aluminium oxide;high purity alumina;alumina material; Manufacturers, Suppliers, Factory

    Semicorex has been producing alumina oxide ceramic;ceramic flange;alumina al2o3;flange;white alumina;alumina ceramic material;alumina machining;alumina aluminium oxide;high purity alumina;alumina material; for many years and is one of the professional alumina oxide ceramic;ceramic flange;alumina al2o3;flange;white alumina;alumina ceramic material;alumina machining;alumina aluminium oxide;high purity alumina;alumina material; manufacturers and Suppliers in China. Once you buy our advanced and durable products which supply bulk packing, we guarantee the large quantity in quick delivery. Over the years, we have provided customers with customized service. Customers are satisfied with our products and excellent service. We sincerely look forward to becoming your reliable long-term business partner! Welcome to buy products from our factory.

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    • Robot End Effector

      Robot End Effector

      Semicorex is a leading independently owned manufacturer of Silicon Carbide Coated Graphite, Precision Machined High Purity Graphite focusing on the Silicon Carbide Coated Graphite, Silicon Carbide Ceramic, MOCVP areas of semiconductor manufacturing. Our Robot End Effector has a good price advantage and cover many of the European and American markets. We look forward to becoming your long-term partner in China.
    • CVD SiC Coated Graphite Pancake Susceptor

      CVD SiC Coated Graphite Pancake Susceptor

      Semicorex provides high-quality CVD SiC coated graphite pancake susceptor. We have been manufacturer and supplier of graphite materials for many years. Our CVD SiC coated graphite pancake susceptor has a good price advantage and cover most of the European and American markets. We look forward to becoming your long-term partner in China.
    • Silicon Carbide Process Tube

      Silicon Carbide Process Tube

      Semicorex Silicon Carbide Process Tube is a crucial component in the realm of semiconductor manufacturing, specifically designed for use in vertical furnaces employed in various semiconductor processing applications such as RTP, diffusion. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
    • Graphite Parts

      Graphite Parts

      Semicorex isostatic graphite parts are mainly used for graphite crucibles in the crystal growth process, three-petal ring high-purity graphite and TaC coating applications. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China*.
    • High-Purity Graphite Isostatic Graphite

      High-Purity Graphite Isostatic Graphite

      Semicorex provide high-purity graphite isostatic graphite with customized service, best choice in the semiconductor processes. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
    • 8 Inch N-type SiC Wafer

      8 Inch N-type SiC Wafer

      Semicorex provides various types of 4H and 6H SiC wafers. We have been manufacturer and supplier of wafers for many years. Our 8 Inch N-type SiC Wafer has a good price advantage and cover most of the European and American markets. We look forward to becoming your long-term partner in China.
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    • Photovoltaic Industry Development Overview

      By 2027, solar photovoltaic (PV) will overtake coal as the world's largest installed capacity. The cumulative installed capacity of solar PV nearly triples in our forecast, growing by nearly 1,500 gigawatts over this period, and will surpass natural gas by 2026 and coal by 2027.

    • About defects in SiC crystals - Micropipe

      SiC substrate can have microscopic defects, such as Threading Screw Dislocation (TSD), Threading Edge Dislocation (TED), Base Plane Dislocation (BPD), and others. These defects are caused by deviations in the arrangement of atoms at the atomic level. SiC crystals may also have macroscopic dislocations, like Si or C inclusions, micropipe, hexagonal voids, polymorphs, etc. These dislocations are typically large in size.

    • What is the process of SiC epitaxial?

      In the high voltage field, particularly for high-voltage devices above 20,000V, the SiC epitaxial technology still faces several challenges. One of the main difficulties is achieving high uniformity, thickness, and doping concentration in the epitaxial layer. For the fabrication of such high-voltage devices, a 200um thick silicon carbide epitaxial wafer with excellent uniformity and concentration is required.

    • Introducing Physical Vapor Transport (PVT) 

      SiC's own characteristics determine its single crystal growth is more difficult. Due to the absence of Si:C=1:1 liquid phase at atmospheric pressure, the more mature growth process adopted by the mainstream of the semiconductor industry can not be used to grow the more mature growth method-straight pulling method, the descending crucible method and other methods for growth. After theoretical calculations, only when the pressure is greater than 105 atm and the temperature is higher than 3200 ℃, can we get the stoichiometric ratio of Si:C = 1:1 solution. pvt method is currently one of the more mainstream methods.

    • Application of GaN

      There are many types of gallium nitride (GaN), with silicon-based GaN being the most discussed. This technology involves growing GaN materials directly on a silicon substrate.

    • Semicorex Announces 8-Inch SiC Epitaxial Wafer

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