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  • SIC Epitaxy Silicon-Based

    • China SIC Epitaxy Silicon-Based Manufacturers, Suppliers, Factory

    Semicorex has been producing SIC Epitaxy Silicon-Based for many years and is one of the professional SIC Epitaxy Silicon-Based manufacturers and Suppliers in China. Once you buy our advanced and durable products which supply bulk packing, we guarantee the large quantity in quick delivery. Over the years, we have provided customers with customized service. Customers are satisfied with our products and excellent service. We sincerely look forward to becoming your reliable long-term business partner! Welcome to buy products from our factory.

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    • 2

      2" Gallium Oxide Substrates

      Semicorex 2" Gallium Oxide Substrates represent a new chapter in the story of fourth-generation semiconductors, with an accelerating pace of mass production and commercialization. These substrates exhibit exceptional benefits for various advanced technological applications. Gallium Oxide substrates not only symbolize a significant advancement in semiconductor technology but also open up new avenues for improving device efficiency and performance across a spectrum of high-stakes industries. We at Semicorex are dedicated to manufacturing and supplying high-performance 2" Gallium Oxide Substrates that fuse quality with cost-efficiency.**
    • Second Half Parts for Lower Baffles in Epitaxial Process

      Second Half Parts for Lower Baffles in Epitaxial Process

      Semicorex Second Half Parts for Lower Baffles in Epitaxial Process, meticulously engineered components designed to revolutionize the performance of your semiconductor devices. Specifically tailored for the intake system of LPE reactors, these semi-cylindrical fittings play a pivotal role in enhancing the epitaxial growth process. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
    • SiC Coated RTP Carrier Plate for Epitaxial Growth

      SiC Coated RTP Carrier Plate for Epitaxial Growth

      Semicorex SiC Coated RTP Carrier Plate for Epitaxial Growth is the perfect solution for semiconductor wafer processing applications. With its high-quality carbon graphite susceptors and quartz crucibles processed by MOCVD on the surface of graphite, ceramics, etc., this product is ideal for wafer handling and epitaxial growth processing. The SiC coated carrier ensures high thermal conductivity and excellent heat distribution properties, making it a reliable choice for RTA, RTP, or harsh chemical cleaning.
    • Blue Green LED Epitaxial Susceptor

      Blue Green LED Epitaxial Susceptor

      Semicorex Blue Green LED Epitaxial Susceptors make the manufacture of high-quality LED wafers more efficient. We have been manufacturer and supplier of silicon carbide coated susceptor for many years. Our Blue Green LED Epitaxial Susceptor has a good price advantage and cover most of the European and American markets. We look forward to becoming your long-term partner in China.
    • Barrel Susceptor Silicon Carbide Coated Graphite

      Barrel Susceptor Silicon Carbide Coated Graphite

      Semicorex Barrel Susceptor Silicon Carbide Coated Graphite is a specialized component designed for use in the epitaxy process, particularly in carrying wafers. Contact us today to learn more about how we can help you with your semiconductor wafer processing needs.
    • Porous Graphite Materials for Single Crystal SiC Growth Applications

      Porous Graphite Materials for Single Crystal SiC Growth Applications

      Semicorex Porous Graphite Materials for Single Crystal SiC Growth Applications, is a specialized material used in the semiconductor processing. This crucial piece of equipment plays a pivotal role on the quality of single crystal SiC. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
    • Related Blog
    • Reviews

    • Understanding the Etching Differences Between Silicon and Silicon Carbide Wafers

      Etching Process: Silicon vs. Silicon Carbide

    • The Study on the Distribution of Electrical Resistivity in n-Type 4H-SiC Crystals

      4H-SiC, as a third-generation semiconductor material, is renowned for its wide bandgap, high thermal conductivity, and excellent chemical and thermal stability, making it highly valuable in high-power and high-frequency applications.

    • Porous Graphite for SiC Crystal Growth

      Currently, most SiC substrate manufacturers use a new crucible thermal field process design with porous graphite cylinders: placing high-purity SiC particle raw materials between the graphite crucible wall and the porous graphite cylinder, while deepening the entire crucible and increasing the crucible diameter.

    • A Review of 9 Sintering Techniques for Silicon Carbide Ceramics

      Silicon carbide (SiC), a prominent structural ceramic, is renowned for its exceptional properties, including high-temperature strength, hardness, elastic modulus, wear resistance, thermal conductivity, and corrosion resistance. These attributes make it suitable for a wide range of applications, from traditional industrial uses in high-temperature kiln furniture, burner nozzles, heat exchangers, sealing rings, and sliding bearings, to advanced applications like ballistic armor, space mirrors, semiconductor wafer chucks, and nuclear fuel cladding.

    • What are the challenges of silicon carbide substrate production?

      Silicon carbide (SiC) is a material that possesses high bond energy, similar to other hard materials like diamond and cubic boron nitride. However, the high bond energy of SiC makes it difficult to crystallize directly into ingots via traditional melting methods. Therefore, the process of growing silicon carbide crystals involves the use of vapor phase epitaxy technology.

    • Funds on Semiconductor projects

      Every country is aware of the importance of chips and is now accelerating the construction of its own chip manufacturing supply chain ecosystem to prevent another chip shortage problem. But the advanced foundries without next-gen chip designers would be the same as “Fabs without Chips”.

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