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Adhering into the theory of "quality, services, efficiency and growth", now we have gained trusts and praises from domestic and international shopper for SIC Epitaxy Silicon-Based,Silicon Wafer,LED Wafer,GaN Wafer,Single Crystal Silicon Carbide, Our really specialized process eliminates the component failure and offers our shoppers unvarying top quality, allowing us to control cost, plan capacity and maintain consistent on time delivery.
SIC Epitaxy Silicon-Based, We look forward to hearing from you, whether you are a returning customer or a new one. We hope you will find what you are looking for here, if not, please contact us immediately. We pride ourselves on top notch customer service and response. Thank you for your business and support!

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  • Silicon Wafer Carrier

    Silicon Wafer Carrier

    Semicorex provides semiconductor-grade ceramics for your OEM semi fabrication tools and wafer handling components focusing on silicon carbide layers in semiconductor industries. We have been manufacturer and supplier of Silicon Wafer Carrier for many years. Our Silicon Wafer Carrier has a good price advantage and cover most of the European and American markets. We look forward to becoming your long-term partner in China.
  • Epitaxial Single-crystal Si Plate

    Epitaxial Single-crystal Si Plate

    the Epitaxial Single-crystal Si Plate encapsulates the zenith of refinement, durability, and dependability for applications pertaining to graphite epitaxy and wafer manipulation. It is distinguished by its density, planarity, and thermal management capabilities, positioning it as the optimal selection for rigorous operational conditions. Semicorex’s commitment to market-leading quality, allied with competitive fiscal considerations, cements our eagerness to establish partnerships in fulfilling your semiconductor wafer conveyance requisites.
  • SiC Bearing

    SiC Bearing

    Semicorex SiC Bearing with its exceptional hardness, strength, and chemical inertness, has emerged as a cornerstone material for engineering demanding applications across diverse industries. When crafted into bearings, SiC unlocks a new level of performance and reliability, particularly in environments characterized by extreme temperatures, corrosive substances, and stringent purity requirements. We at Semicorex are dedicated to manufacturing and supplying high-performance SiC Bearing that fuses quality with cost-efficiency.**
  • Quartz Tank for Wet Processing

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    Semicorex Quartz Tank for Wet Processing, also known as quartz bath, is particularly critical in wet processes used for wafer fabrication.**
  • SICOI Wafer

    SICOI Wafer

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  • What is porous graphite?

    Porous graphite, also known as porous carbon or porous graphite material, is a graphite form that has been specially engineered to have an interconnected network of pores or voids within its structure.

  • Porous Graphite for High Quality SiC Crystal Growth by PVT Method

    Silicon Carbide (SiC) has emerged as a key material in the field of semiconductor technology, offering exceptional properties that make it highly desirable for various electronic and optoelectronic applications. The production of high-quality SiC single crystals is crucial for advancing the capabilities of devices such as power electronics, LEDs, and high-frequency devices. In this article, we delve into the significance of porous graphite in the Physical Vapor Transport (PVT) method for 4H-SiC single crystal growth.

  • Epitaxial Layers: The Foundation of Advanced Semiconductor Devices

    In the semiconductor industry, epitaxial layers play a crucial role by forming specific single-crystal thin films atop a wafer substrate, collectively known as epitaxial wafers. Particularly, silicon carbide (SiC) epitaxial layers grown on conductive SiC substrates produce homogenous SiC epitaxial wafers, which are instrumental in the fabrication of power devices such as Schottky diodes, MOSFETs, and IGBTs, with 4H-SiC substrates being the most widely utilized.

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  • Defect Detection in Silicon Carbide Wafer Processing

    SiC substrates are the most crucial component in the silicon carbide industry, accounting for nearly 50% of its value. Without SiC substrates, it is impossible to manufacture SiC devices, making them the essential material foundation.

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