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China Epitaxy IC Fabrication Manufacturers, Suppliers, Factory

Semicorex has been producing Epitaxy IC Fabrication for many years and is one of the professional Epitaxy IC Fabrication manufacturers and Suppliers in China. Once you buy our advanced and durable products which supply bulk packing, we guarantee the large quantity in quick delivery. Over the years, we have provided customers with customized service. Customers are satisfied with our products and excellent service. We sincerely look forward to becoming your reliable long-term business partner! Welcome to buy products from our factory.

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  • Quartz 12” Boat

    Quartz 12” Boat

    Semicorex Quartz 12” Boat is an essential component in the semiconductor manufacturing process, designed specifically for the safe and efficient handling of 12-inch wafers. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China*.
  • Process Tube for Diffusion Furnaces

    Process Tube for Diffusion Furnaces

    Semicorex process tube for diffusion furnaces is a specialized component used in the manufacturing of semiconductor devices. It is designed to provide a controlled environment for diffusion processes, where impurities are introduced into the semiconductor wafers to modify their electrical properties. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • LPE Halfmoon Reaction Chamber

    LPE Halfmoon Reaction Chamber

    Semicorex LPE Halfmoon Reaction Chamber is indispensable for the efficient and reliable operation of SiC epitaxy, ensuring the production of high-quality epitaxial layers while reducing maintenance costs and increasing operational efficiency. **
  • SiC Coated Graphite Lid Cover

    SiC Coated Graphite Lid Cover

    Unlock the epitome of performance and durability in the realm of semiconductor equipment with our cutting-edge SiC Coated Graphite Lid Cover. This disc-shaped component is expertly designed for various semiconductor applications, offering a unique combination of graphite and Silicon Carbide (SiC) coating to enhance functionality and efficiency. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • MOCVD Susceptors

    MOCVD Susceptors

    Semicorex’s MOCVD Susceptors epitomize the pinnacle of craftsmanship, endurance, and reliability for intricate graphite epitaxy and precise wafer handling tasks. These susceptors are renowned for their high density, exceptional flatness, and superior thermal control, making them the premier choice for demanding manufacturing environments. We at Semicorex are dedicated to manufacturing and supplying high-performance MOCVD Susceptors that fuse quality with cost-efficiency.
  • Quartz Sand

    Quartz Sand

    Semicorex is a leading provider of ultra-high purity quartz sand, offering products with ≥99.995% SiO2 content. Our quartz sand stands out for its exceptional purity, ultra-low alkali metal content, and customizable aluminum content.**
  • Related Blog
  • Reviews

  • SK Siltron Expands Its SiC Wafer Production with a $544 Million Loan from the U.S. Department of Energy

    The U.S. Department of Energy (DOE) recently confirmed a $544 million loan to SK Siltron, a semiconductor wafer manufacturer under SK Group.

  • CVD process for SiC wafer epitaxy

    The CVD process for SiC wafer epitaxy involves the deposition of SiC films onto a SiC substrate using a gas-phase reaction. The SiC precursor gases, typically methyltrichlorosilane (MTS) and ethylene (C2H4), are introduced into a reaction chamber where the SiC substrate is heated to a high temperature (usually between 1400 and 1600 degrees Celsius) under a controlled atmosphere of hydrogen (H2).

  • Porous Graphite for SiC Crystal Growth

    Currently, most SiC substrate manufacturers use a new crucible thermal field process design with porous graphite cylinders: placing high-purity SiC particle raw materials between the graphite crucible wall and the porous graphite cylinder, while deepening the entire crucible and increasing the crucible diameter.

  • Purification Technology of Graphite in SiC semiconductor

    Graphite is vital in producing Silicon Carbide (SiC) semiconductors, known for their exceptional thermal and electrical properties. This makes SiC ideal for high-power, high-temperature, and high-frequency applications. In SiC semiconductor manufacturing, graphite is commonly used for crucibles, heaters, and other high-temperature processing components due to its excellent thermal conductivity, chemical stability, and resistance to thermal shock.

  • The Study on the Distribution of Electrical Resistivity in n-Type 4H-SiC Crystals

    4H-SiC, as a third-generation semiconductor material, is renowned for its wide bandgap, high thermal conductivity, and excellent chemical and thermal stability, making it highly valuable in high-power and high-frequency applications.

  • SiC Epitaxy

    There are two types of epitaxy: homogeneous and heterogeneous. In order to produce SiC devices with specific resistance and other parameters for different applications, the substrate must meet the conditions of epitaxy before production can begin. The quality of the epitaxy affects the device's performance.

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