English
Home > Products
  • Epitaxy IC Fabrication

    • China Epitaxy IC Fabrication Manufacturers, Suppliers, Factory

    Semicorex has been producing Epitaxy IC Fabrication for many years and is one of the professional Epitaxy IC Fabrication manufacturers and Suppliers in China. Once you buy our advanced and durable products which supply bulk packing, we guarantee the large quantity in quick delivery. Over the years, we have provided customers with customized service. Customers are satisfied with our products and excellent service. We sincerely look forward to becoming your reliable long-term business partner! Welcome to buy products from our factory.

    Related Products

    Hot Products

    • Silicon on Insulator Wafers

      Silicon on Insulator Wafers

      Semicorex Silicon on Insulator Wafers are advanced semiconductor materials that enable superior performance, reduced power consumption, and enhanced device scalability. Choosing Semicorex's SOI wafers ensures you receive top-tier, precision-engineered products, backed by our expertise and commitment to innovation, reliability, and quality.*
    • SiC Shower Head

      SiC Shower Head

      Semicorex SiC Shower Head is an essential component in the epitaxial growth process, specifically designed to enhance the uniformity and efficiency of thin film deposition on semiconductor wafers. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
    • Ultra-Thin Graphite with High Porosity

      Ultra-Thin Graphite with High Porosity

      Semicorex Ultra-Thin Graphite with High Porosity is primarily utilized in the semiconductor industry, particularly in the single crystal growth process featuring excellent surface adhesion, superior heat resistance, high porosity and ultra-thin thickness with outstanding machinability. We at Semicorex are dedicated to manufacturing and supplying high-performance Ultra-Thin Graphite with High Porosity that fuse quality with cost-efficiency. **
    • TaC Coated Graphite Susceptor

      TaC Coated Graphite Susceptor

      Semicorex cutting-edge TaC Coated Graphite Susceptor, a revolutionary component designed to elevate your wafer epitaxial process to new heights of efficiency and precision. Crafted with unparalleled expertise and utilizing state-of-the-art technology, Semicorex TaC Coated Graphite Susceptor is engineered to meet the exacting demands of semiconductor manufacturing.
    • GaN Epitaxy

      GaN Epitaxy

      Semicorex provides custom thin film HEMT (Gallium nitride) GaN epitaxy on Si/SiC/GaN substrates. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
    • Solar Graphite Boat for PECVD

      Solar Graphite Boat for PECVD

      Semicorex provide high-quality Solar Graphite Boat for PECVD with customized service. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
    • Related Blog
    • Reviews

    • Monocrystalline silicon vs. polycrystalline silicon

      Single crystal silicon and polycrystalline silicon each have their own unique advantages and applicable scenarios. Single crystal silicon is suitable for high-performance electronic products and microelectronics due to its excellent electrical and mechanical properties. Polycrystalline silicon, on the other hand, dominates the field of solar cells due to its low cost and good photoelectric conversion efficiency.

    • What is Thermal Field?

      In the field of single crystal growth, the temperature distribution within the crystal growth furnace plays a critical role. This temperature distribution, commonly referred to as the thermal field, is a vital factor that influences the quality and characteristics of the crystal being grown. The thermal field can be categorized into two types: static and dynamic.

    • What is a MOCVD system?

    • MOCVD is the key equipment

    • Dislocation in SiC crystals

      SiC substrate can have microscopic defects, such as Threading Screw Dislocation (TSD), Threading Edge Dislocation (TED), Base Plane Dislocation (BPD), and others. These defects are caused by deviations in the arrangement of atoms at the atomic level.

    • What is SiC epitaxy?

      Silicon Carbide (SiC) epitaxy is a key technology in the field of semiconductors, particularly for the development of high-power electronic devices. SiC is a compound semiconductor with a wide bandgap, which makes it ideal for applications that require a high-temperature and high-voltage operation.

    Send Inquiry

    Hit enter to search or ESC to close
    X
    We use cookies to offer you a better browsing experience, analyze site traffic and personalize content. By using this site, you agree to our use of cookies. Privacy Policy
    Reject Accept