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"Control the quality by the details, show the strength by quality". Our company has strived to establish a highly efficient and stable staff team and explored an effective quality control process for Epitaxy IC Fabrication,Etch Carrier(ICP/PSS),Single Wafer Susceptors,Silicon Carbide Wafer Tray,Graphite Wafer Susceptors, Welcome any inquiry to our firm. We will be happy to ascertain helpful business enterprise relationships along with you!
Epitaxy IC Fabrication, Our company warmly invites domestic and overseas customers to come and negotiate business with us. Allow us to join hands to create a brilliant tomorrow! We are looking forward to cooperating with you sincerely to achieve a win-win situation. We promise to try our best to deliver you with high quality and efficient services.

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  • SiC Coated MOCVD Susceptor

    SiC Coated MOCVD Susceptor

    Semicorex is a leading manufacturer and supplier of SiC Coated MOCVD Susceptor. Our product is specially designed for semiconductor industries to grow the epitaxial layer on the wafer chip. The high purity Silicon Carbide coated graphite carrier is used as the center plate in MOCVD, with a gear or ring-shaped design. Our susceptor is widely used in MOCVD equipment, ensuring high heat and corrosion resistance, and great stability in extreme environments.
  • CVD TaC Coated Ring

    CVD TaC Coated Ring

    Semicorex CVD TaC Coated Ring reigns as a critical component in semiconductor processing, symbolizing the zenith of modern materials engineering. Crafted for implementation in the most rigorous environments where precision and reliability reign supreme, this ring embodies the fusion of cutting-edge coating techniques with resilient material science. Semicorex steadfastly delivers top-tier products at competitive prices, and we eagerly anticipate forging a longstanding partnership with you in China.*
  • ALD Planetary Susceptor

    ALD Planetary Susceptor

    Semicorex ALD Planetary Susceptor is important in ALD equipment due to their ability to withstand harsh processing conditions, ensuring high-quality film deposition for a variety of applications. As the demand for advanced semiconductor devices with smaller dimensions and enhanced performance continues to grow, the use of the ALD Planetary Susceptor in ALD is expected to expand further.**
  • Graphite Thermal Field

    Graphite Thermal Field

    Semicorex Graphite Thermal Field combines cutting-edge material science with a deep understanding of crystal growth processes, it delivers innovative a solution that empowers the semiconductor industry to achieve new levels of performance, efficiency, and cost-effectiveness.**
  • ZrO2 Crucible

    ZrO2 Crucible

    Semicorex ZrO2 Crucible is crafted from stabilized zirconia ceramic, presenting a standard composition of 94.7% zirconium dioxide (ZrO2) and 5.2% yttrium oxide (Y2O3) by weight percentage, or alternatively, 97% ZrO2 and 3% Y2O3 by mol percentage. This precise formulation endows the ZrO2 Crucible with a suite of advantageous characteristics that cater specifically to the demands of high-performance industrial processes.**
  • Teflon Cassette

    Teflon Cassette

    Semicorex Teflon Cassette is a high-performance carrier designed for the efficient handling and cleaning of wafers in semiconductor, photovoltaic, and electronics industries. Choose Semicorex for our reliable, durable, and cost-effective solutions that ensure optimal wafer quality and long-lasting performance throughout the manufacturing process.*
  • Related Blog
  • Reviews

  • Why choose SiC-coated graphite susceptors?

    Graphite susceptor is one of the essential parts in the MOCVD equipment, is the carrier and the heater of the wafer substrate. Its properties of thermal stability and thermal uniformity play a decisive role in the quality of wafer epitaxial growth, which directly determines the uniformity and purity of the layer materials, in a result its quality directly affects the preparation of epitaxy.

  • Doping Control in Sublimation SiC Growth

    Silicon carbide (SiC) plays an important role in manufacturing power electronics and high-frequency devices due to its excellent electrical and thermal properties. The quality and doping level of SiC crystals directly affect the performance of the device, so precise control of doping is one of the key technologies in the SiC growth process.

  • Challenges of Ion Implantation Technology in SiC and GaN Power Devices

    Wide bandgap (WBG) semiconductors such as Silicon Carbide (SiC) and Gallium Nitride (GaN) are expected to play an increasingly important role in power electronic devices. They offer several advantages over traditional Silicon (Si) devices, including higher efficiency, power density, and switching frequency. Ion implantation is the primary method for achieving selective doping in Si devices. However, there are some challenges when applying it to wide bandgap devices. In this article, we will focus on some of these challenges and summarize their potential applications in GaN power devices.

  • High-Purity CVD Thick SiC: Process Insights for Material Growth

    Thick, high-purity silicon carbide (SiC) layers, typically exceeding 1mm, are critical components in various high-value applications, including semiconductor fabrication and aerospace technologies. This article delves into the Chemical Vapor Deposition (CVD) process for producing such layers, highlighting key process parameters, material characteristics, and emerging applications.

  • The Study on the Distribution of Electrical Resistivity in n-Type 4H-SiC Crystals

    4H-SiC, as a third-generation semiconductor material, is renowned for its wide bandgap, high thermal conductivity, and excellent chemical and thermal stability, making it highly valuable in high-power and high-frequency applications.

  • Surface Polishing of Silicon Wafers

    Silicon wafer surface polishing is a crucial process in semiconductor manufacturing. Its primary goal is to achieve extremely high standards of surface flatness and roughness by removing micro-defects, layers of stress damage, and contamination from impurities such as metal ions.

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