English
Home > Products > dry etching process

China dry etching process Manufacturers, Suppliers, Factory

We always think and practice corresponding to the change of circumstance, and grow up. We aim at the achievement of a richer mind and body and the living for dry etching process,chemical vapor deposition,cvd process,pe cvd,pvd cvd, We look forward to providing you with our goods while in the in close proximity to long term, and you will discover our quotation is extremely realistic as well as high-quality of our solutions is incredibly outstanding!
dry etching process, With high quality, reasonable price, on-time delivery and customized & personalized services to help customers achieve their goals successfully, our company has got praise in both domestic and foreign markets. Buyers are welcome to contact us.

Related Products

Hot Products

  • Silicon Carbide Sleeve

    Silicon Carbide Sleeve

    Semicorex Silicon Carbide Sleeve is commonly used as a wear-resistant and corrosion-resistant liner for equipment such as cylinders, pumps, valves, sliding bearings, and grinder drums.
  • MOCVD Epitaxy Susceptor

    MOCVD Epitaxy Susceptor

    Semicorex MOCVD Epitaxy Susceptor has emerged as a critical component in Metal-Organic Chemical Vapor Deposition (MOCVD) epitaxy, enabling the fabrication of high-performance semiconductor devices with exceptional efficiency and precision. Its unique combination of material properties makes it perfectly suited for the demanding thermal and chemical environments encountered during epitaxial growth of compound semiconductors.**
  • Solar Graphite Boat for PECVD

    Solar Graphite Boat for PECVD

    Semicorex provide high-quality Solar Graphite Boat for PECVD with customized service. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • Carbon and Graphite Soft Felt

    Carbon and Graphite Soft Felt

    Semicorex Carbon and graphite soft felt is a specialized material that is made from carbon fibers or graphite fibers that are intertwined to form a soft, flexible, and porous structure. It is commonly used in various industrial applications due to its unique properties.
  • High-Temperature SiC Coating for Plasma Etch Chambers

    High-Temperature SiC Coating for Plasma Etch Chambers

    When it comes to wafer handling processes such as epitaxy and MOCVD, Semicorex's High-Temperature SiC Coating for Plasma Etch Chambers is the top choice. Our carriers provide superior heat resistance, even thermal uniformity, and durable chemical resistance thanks to our fine SiC crystal coating.
  • Tantalum Carbide Coating Halfmoon Part

    Tantalum Carbide Coating Halfmoon Part

    Semicorex Tantalum Carbide Coating Halfmoon Part is a highly specialized component designed for use in the epitaxial deposition process. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • Related Blog
  • Reviews

  • Dislocation in SiC crystals

    SiC substrate can have microscopic defects, such as Threading Screw Dislocation (TSD), Threading Edge Dislocation (TED), Base Plane Dislocation (BPD), and others. These defects are caused by deviations in the arrangement of atoms at the atomic level.

  • The Application Prospects of 12-Inch Silicon Carbide Substrates

    Silicon carbide (SiC), as a wide bandgap semiconductor material, offers unparalleled advantages in high-power, high-temperature, and high-frequency applications.

  • What is Electrostatic Chuck(ESC)?

    In semiconductor manufacturing, the precision and stability of the etching process are paramount. One critical factor in achieving high-quality etching is ensuring that wafers are perfectly flat on the tray during the process.

  • Semiconductor doping process

    One of the unique properties of semiconductor materials is that their conductivity, as well as their conductivity type (N-type or P-type), can be created and controlled through a process called doping. This involves introducing specialized impurities, known as dopants, into the material to form junctions on the surface of the wafer. The industry employs two main doping techniques: thermal diffusion and ion implantation.

  • Introduction to Third-Generation Semiconductors: GaN and Related Epitaxial Technologies

    GaN materials gained prominence following the awarding of the 2014 Nobel Prize in Physics for blue LEDs. Initially entering the public eye through fast-charging applications in consumer electronics, GaN-based power amplifiers and RF devices have also quietly emerged as critical components in 5G base stations. In recent years, GaN-based automotive-grade power devices have shown promise, potentially opening new growth avenues for GaN material applications.

  • Oxidation Process

    The most basic stage of all processes is the oxidation process. The oxidation process is to place the silicon wafer in an atmosphere of oxidants such as oxygen or water vapor for high-temperature heat treatment (800~1200℃), and a chemical reaction occurs on the surface of the silicon wafer to form an oxide film (SiO2 film).

Send Inquiry

Hit enter to search or ESC to close
X
We use cookies to offer you a better browsing experience, analyze site traffic and personalize content. By using this site, you agree to our use of cookies. Privacy Policy
Reject Accept