SiC ICP Etching Plate

Semicorex SiC ICP Etching Plate meets industry demands by offering exceptional thermal conductivity, superior hardness, and remarkable chemical stability, making it a preferred choice for advanced semiconductor manufacturing.

Silicon Carbide is renowned for its extraordinary thermal conductivity, a crucial attribute in semiconductor manufacturing. This property allows the SiC ICP Etching Plate to efficiently dissipate heat generated during the etching process, maintaining optimal operating temperatures. By effectively managing heat, the SiC ICP Etching Plate minimizes the risk of overheating, ensuring consistent performance and reliability, even in high-power applications. This thermal management is essential for maintaining the integrity of the etching process and achieving high-quality results.

Another standout feature of the SiC ICP Etching Plate is its superior hardness and wear resistance. As one of the hardest materials available, Silicon Carbide exhibits exceptional resistance to abrasion and mechanical wear. This characteristic is particularly valuable in the plasma etching environment, where the etching plate is exposed to aggressive chemical and physical conditions. The durability of the SiC ICP Etching Plate translates to a longer service life, reduced downtime, and lower maintenance costs, making it a cost-effective solution for high-volume manufacturing.

In addition to its thermal and mechanical properties, the SiC ICP Etching Plate offers excellent chemical stability. Silicon Carbide is highly resistant to corrosion and chemical attack, ensuring that it maintains its structural integrity and performance even in harsh chemical environments. This resistance to chemical degradation is crucial for maintaining the precision and accuracy of the etching process, as any compromise in the etching plate's integrity can lead to defects in the semiconductor devices being manufactured.