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  • Silicon Carbide Wafer Carrier

    • China Silicon Carbide Wafer Carrier Manufacturers, Suppliers, Factory

    Semicorex has been producing Silicon Carbide Wafer Carrier for many years and is one of the professional Silicon Carbide Wafer Carrier manufacturers and Suppliers in China. Once you buy our advanced and durable products which supply bulk packing, we guarantee the large quantity in quick delivery. Over the years, we have provided customers with customized service. Customers are satisfied with our products and excellent service. We sincerely look forward to becoming your reliable long-term business partner! Welcome to buy products from our factory.

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      Unlock the potential of cutting-edge semiconductor applications with our Ga2O3 Substrate, a revolutionary material at the forefront of semiconductor innovation. Ga2O3, a fourth-generation wide-bandgap semiconductor, exhibits unparalleled characteristics that redefine power device performance and reliability.
    • SiC Wafer Holder

      SiC Wafer Holder

      Semicorex SiC (Silicon Carbide) SiC Wafer Holder, also known as a wafer chuck or wafer carrier, is a specialized tool used in the handling and processing of semiconductor wafers. It is designed to securely hold and protect the delicate silicon carbide wafers during various stages of fabrication. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
    • Barrel Susceptor with SiC Coating

      Barrel Susceptor with SiC Coating

      Semicorex Barrel Susceptor with SiC Coating is a cutting-edge solution designed to elevate the efficiency and precision of silicon epitaxial processes. Crafted with meticulous attention to detail, this Barrel Susceptor with SiC Coating is tailored to meet the demanding requirements of semiconductor manufacturing, serving as the optimal wafer holder and facilitating the seamless transfer of heat to wafers. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
    • Silicon Carbide Coating Graphite Susceptor for MOCVD

      Silicon Carbide Coating Graphite Susceptor for MOCVD

      Semicorex is a trusted supplier and manufacturer of silicon carbide coating graphite susceptor for MOCVD. Our product is specially designed to cater to the needs of the semiconductor industry in growing the epitaxial layer on the wafer chip. The product is used as the center plate in MOCVD, with a gear or ring-shaped design. It has high heat and corrosion resistance, making it ideal for use in extreme environments.
    • Semiconductor Quartz Ring

      Semiconductor Quartz Ring

      Semicorex Semiconductor Quartz Ring stands as an indispensable component within the intricate realm of semiconductor processing. Crafted with precision and engineered for reliability, this ring serves as a crucial interface between various stages of semiconductor fabrication, ensuring optimal performance and efficiency throughout the process. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
    • RTP/RTA SiC Coating Carrier

      RTP/RTA SiC Coating Carrier

      Semicorex RTP/RTA SiC Coating Carrier is engineered to withstand the toughest conditions of the deposition environment. With its high heat and corrosion resistance, this product is designed to provide optimal performance for epitaxial growth. The SiC coated carrier has a high thermal conductivity and excellent heat distribution properties, ensuring reliable performance for RTA, RTP, or harsh chemical cleaning.
    • Related Blog
    • Reviews

    • Begin Production of 3C-SiC Wafer

      The thermal conductivity of bulk 3C-SiC, recently measured, is the second-highest among inch-scale large crystals, ranking just below diamond. Silicon carbide (SiC) is a wide bandgap semiconductor extensively used in electronic applications, and it exists in various crystalline forms known as polytypes. Managing high localized heat flux is a significant challenge in power electronics, as it can lead to device overheating and long-term performance and reliability issues.

    • What is a TaC coating on graphite?

      In the rapidly evolving field of semiconductor manufacturing, even the smallest improvements can make a big difference when it comes to achieving optimal performance, durability, and efficiency. One advancement that is generating a lot of buzz in the industry is the use of TaC (Tantalum Carbide) coating on graphite surfaces. But what exactly is TaC coating, and why are semiconductor manufacturers taking notice of it?

    • Ion Implant and Diffusion Process

      Ion implantation is a method of semiconductor doping and one of the main processes in semiconductor manufacturing.

    • What is a SiC Boat, and What are its Various Manufacturing Processes?

      A SiC boat, short for silicon carbide boat, is a high-temperature-resistant accessory used in furnace tubes to carry wafers during high-temperature processing. Due to the outstanding properties of silicon carbide such as resistance to high temperatures, chemical corrosion, and excellent thermal stability, SiC boats are extensively utilized in various thermal treatment processes including diffusion, oxidation, Chemical Vapor Deposition (CVD), and annealing.

    • Coating in the thermal field of semiconductor silicon single crystals

      The coated parts in semiconductor silicon single crystal hot field are generally coated by CVD method, including pyrolytic carbon coating, Silicon Carbide coating and Tantalum Carbide coating, each with different characteristics.

    • Gallium Nitride Epitaxial Wafers: An Introduction to the Fabrication Process

      Gallium Nitride (GaN) epitaxial wafer growth is a complex process, often utilizing a two-step method. This method involves several critical stages, including high-temperature baking, buffer layer growth, recrystallization, and annealing. By meticulously controlling the temperature throughout these stages, the two-step growth method effectively prevents wafer warping caused by lattice mismatch or stress, making it the predominant fabrication method for GaN epitaxial wafers globally.

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