Semicorex provides semiconductor-grade ceramics for your OEM semi fabrication tools and wafer handling components focusing on silicon carbide layers in semiconductor industries. We have been manufacturer and supplier of Wafer Carrier Tray for many years. Our Wafer Carrier Tray has a good price advantage and cover most of the European and American markets. We look forward to becoming your long-term partner in China.
Not only for thin film deposition phases such as epitaxy or MOCVD, or wafer handling processing, Semicorex supplies ultra-pure ceramic carrier used to support wafers. At the core of the process, the Wafer Carrier Tray for the MOCVD, are first subjected to the deposition environment, so it has high heat and corrosion resistance. The SiC coated carrier also has a high thermal conductivity, and excellent heat distribution properties.
Contact us today to learn more about our Wafer Carrier Tray.
Parameters of Wafer Carrier Tray
Technical Properties |
||||
Index |
Unit |
Value |
||
Material Name |
Reaction Sintered Silicon Carbide |
Pressureless Sintered Silicon Carbide |
Recrystallized Silicon Carbide |
|
Composition |
RBSiC |
SSiC |
R-SiC |
|
Bulk Density |
g/cm3 |
3 |
3.15 ± 0.03 |
2.60-2.70 |
Flexural Strength |
MPa (kpsi) |
338(49) |
380(55) |
80-90 (20°C) 90-100(1400°C) |
Compressive Strength |
MPa (kpsi) |
1120(158) |
3970(560) |
> 600 |
Hardness |
Knoop |
2700 |
2800 |
/ |
Breaking Tenacity |
MPa m1/2 |
4.5 |
4 |
/ |
Thermal Conductivity |
W/m.k |
95 |
120 |
23 |
Coefficient of Thermal Expansion |
10-6.1/°C |
5 |
4 |
4.7 |
Specific Heat |
Joule/g 0k |
0.8 |
0.67 |
/ |
Max temperature in air |
℃ |
1200 |
1500 |
1600 |
Elastic Modulus |
Gpa |
360 |
410 |
240 |
The difference between SSiC and RBSiC:
1. Sintering process is different. RBSiC is to infiltrate free Si into silicon carbide at a low temperature, SSiC is formed by natural shrinkage at 2100 degrees.
2. SSiC have smoother surface, higher density and higher strength, for some sealings with more strict surface requirements, SSiC will be better.
3. Different used time under different PH and temperature, SSiC is longer than RBSiC
Features of Wafer Carrier Tray
- CVD Silicon Carbide coatings to improve service life.
- Thermal insulation made of high-performance purified rigid carbon.
- Both the graphite substrate and silicon carbide layer have a high thermal conductivity, and excellent heat distribution properties.
- High-purity graphite and SiC coating for pinhole resistance and higher lifetime
Available shapes of silicon carbide ceramics:
● Ceramic rod / ceramic pin / ceramic plunger
● Ceramic tube / ceramic bushing / ceramic sleeve
● Ceramic ring / ceramic washer / ceramic spacer
● Ceramic disc
● Ceramic plate / ceramic block
● Ceramic ball
● Ceramic piston
● Ceramic nozzle
● Ceramic crucible
● Other custom ceramic parts