Plasma Processing Focus Ring

Semicorex Plasma processing focus ring is specially designed to meet the high demands of plasma etch processing in the semiconductor industry. Our advanced, high-purity Silicon Carbide Coated Components are built to withstand extreme environments and are suitable for use in various applications, including silicon carbide layers and epitaxy semiconductors.

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Product Description

Our Plasma processing focus ring is highly stable for RTA, RTP, or harsh chemical cleaning, making them an ideal choice for use in plasma etch (or dry etch) chambers. Designed to improve etch uniformity around the wafer edge or perimeter, our focus rings or edge rings are engineered to minimize contamination and unscheduled maintenance.

Our SiC Coating is a dense, wear-resistant silicon carbide coating with high corrosion and heat resistance properties as well as excellent thermal conductivity. We apply SiC in thin layers onto the graphite using the chemical vapor deposition (CVD) process. This ensures that our SiC Focus Rings have superior quality and durability, making them a reliable choice for your plasma etch processing needs.

Parameters of Plasma processing focus ring

Main Specifications of CVD-SIC Coating
SiC-CVD Properties
Crystal Structure	FCC β phase
Density	g/cm ³	3.21
Hardness	Vickers hardness	2500
Grain Size	μm	2~10
Chemical Purity	%	99.99995
Heat Capacity	J·kg-1 ·K-1	640
Sublimation Temperature	℃	2700
Felexural Strength	MPa (RT 4-point)	415
Young’ s Modulus	Gpa (4pt bend, 1300℃)	430
Thermal Expansion (C.T.E)	10-6K-1	4.5
Thermal conductivity	(W/mK)	300

Features of Plasma processing focus ring

- CVD Silicon Carbide coatings to improve service life.

- Thermal insulation made of high-performance purified rigid carbon.

- Carbon/Carbon composite heater and plate. - Both the graphite substrate and silicon carbide layer have a high thermal conductivity, and excellent heat distribution properties.

- High-purity graphite and SiC coating for pinhole resistance and higher lifetime