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China Silicon Carbide Seal Parts Manufacturers, Suppliers, Factory

In the past few years, our firm absorbed and digested highly developed technologies equally at home and abroad. Meanwhile, our business staffs a group of experts devoted on the growth of Silicon Carbide Seal Parts,Carbide Seal Ring,Bearing Seal,Graphite Bush Rings,Sic Seal Ring, We warmly welcome all intrigued clients to call us for additional details.
Silicon Carbide Seal Parts, We adopted technique and quality system management, based on "customer orientated, reputation first, mutual benefit, develop with joint efforts", welcome friends to communicate and cooperate from all over the world.

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    SiC Susceptor for MOCVD

    Semicorex is a leading manufacturer and supplier of SiC Susceptor for MOCVD. Our product is specially designed to cater to the needs of the semiconductor industry in growing the epitaxial layer on the wafer chip. The product is used as the center plate in MOCVD, with a gear or ring-shaped design. It has high heat and corrosion resistance, making it ideal for use in extreme environments.
  • SiC Epi-Wafer Susceptor

    SiC Epi-Wafer Susceptor

    Semicorex is a large-scale manufacturer and supplier of Silicon Carbide Coated Graphite Susceptor in China. We focus on semiconductor industries such as silicon carbide layers and epitaxy semiconductor. Our SiC Epi-Wafer Susceptor has a good price advantage and cover many of the European and American markets. We look forward to becoming your long-term partner.
  • TaC Coated Crucible

    TaC Coated Crucible

    Introducing the CVD Tac coated crucible, the perfect solution for semiconductor equipment manufacturers and users who demand the highest level of quality and performance. Our crucibles are coated with a state-of-the-art CVD Tac (tantalum carbide) layer, which provides superior resistance to corrosion and wear, making them ideal for use in a variety of semiconductor applications.
  • SiC Coated Ring

    SiC Coated Ring

    Semicorex SiC Coated Ring is a crucial component in the semiconductor epitaxial growth process, designed to meet the demanding requirements of modern semiconductor manufacturing. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • LPE Part

    LPE Part

    Semicorex LPE Part is a SiC-coated component specifically designed for the SiC epitaxy process, offering exceptional thermal stability and chemical resistance to ensure efficient operation in high-temperature and harsh environments. By choosing Semicorex products, you benefit from high-precision, long-lasting custom solutions that optimize the SiC epitaxy growth process and enhance production efficiency.*
  • SiC Coated Graphite Trays

    SiC Coated Graphite Trays

    Semicorex SiC Coated Graphite Trays are high-performance carrier solutions specifically designed for AlGaN epitaxial growth in the UV LED industry. Choose Semicorex for industry-leading material purity, precision engineering, and unmatched reliability in demanding MOCVD environments.*
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  • CVD process for SiC wafer epitaxy

    The CVD process for SiC wafer epitaxy involves the deposition of SiC films onto a SiC substrate using a gas-phase reaction. The SiC precursor gases, typically methyltrichlorosilane (MTS) and ethylene (C2H4), are introduced into a reaction chamber where the SiC substrate is heated to a high temperature (usually between 1400 and 1600 degrees Celsius) under a controlled atmosphere of hydrogen (H2).

  • What is the diffusion furnace?

    A diffusion furnace is a specialized piece of equipment used to introduce impurities into semiconductor wafers in a controlled manner. These impurities, called dopants, change the electrical properties of semiconductors, allowing different types of electronic components to be made. This controlled diffusion process is critical to the production of transistors, diodes and integrated circuits.

  • TaC Coating Crucible for AlN Crystal Growth

    The third generation of semiconductor materials AlN belongs to the direct bandgap semiconductor, its bandwidth of 6.2 eV, with high thermal conductivity, resistivity, breakdown field strength, as well as excellent chemical and thermal stability, is not only an important blue light, ultraviolet materials, or electronic devices and integrated circuits, important packaging, dielectric isolation and insulation materials, especially for high-temperature high-power devices. In addition, AlN and GaN have a good thermal match and chemical compatibility, AlN used as GaN epitaxial substrate, can significantly reduce the defect density in GaN devices, improve device performance.

  • SiC Boats vs. Quartz Boats: Current Usage and Future Trends in Semiconductor Manufacturing

    This article delves into the usage and future trajectory of silicon carbide (SiC) boats in relation to quartz boats within the semiconductor industry, specifically focusing on their applications in solar cell manufacturing.

  • How is Silicon Carbide Ceramic Applied and What is its Future in Wear and High-Temperature Resistance?

    Silicon carbide (SiC) ceramics, known for their high strength, hardness, wear resistance, corrosion resistance, and high-temperature stability, have demonstrated immense potential and value across numerous industrial sectors since their introduction.

  • Application of carbon fiber composite

    Carbon fiber (CF) is a type of fibrous material that contains over 95% carbon.

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