GaN Epitaxy Carrier

The Semicorex GaN Epitaxy Carrier excels in securely transporting wafers within the furnace while is engineered for wafer epitaxial processes. The GaN Epitaxy Carrier is crucial for achieving high-quality, reproducible thin films and epitaxial layers necessary for producing advanced electronic and optoelectronic devices.

The graphite substrate of the GaN Epitaxy Carrier is enhanced with a state-of-the-art Chemical Vapor Deposition (CVD) silicon carbide (SiC) coating. This SiC layer is meticulously applied via chemical vapor deposition, providing robust protection against chemical reactions and wear during the epitaxy process. Additionally, the SiC coating of  the GaN Epitaxy Carrier improves the thermal properties of the carrier, facilitating efficient and uniform heating of the wafers. Such uniform heating is vital for producing consistent and high-quality epitaxial layers on semiconductor wafers.

Customizable to fit a variety of semiconductor wafer sizes, the Semicorex GaN Epitaxy Carrier is a versatile solution for diverse production needs. Whether specific sizes, shapes, or coating thicknesses are required, our team collaborates with clients to develop a solution that meets their precise specifications and optimizes performance for their unique applications.