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Silicon carbide (SiC), as a wide bandgap semiconductor material, offers unparalleled advantages in high-power, high-temperature, and high-frequency applications.

In order to introduce the SiC coated graphite susceptor, it's important to understand its application. When manufacturing devices, further epitaxial layers are required to be built on some wafer substrates.

Isostatic graphite is a type of graphite with an ultra-fine grain. It is used for applications where the mechanical properties of other fine-grained graphites are inadequate.

Within the silicon carbide (SiC) industry chain, substrate suppliers hold significant leverage, primarily due to value distribution. SiC substrates account for 47% of the total value, followed by epitaxial layers at 23%, while device design and manufacturing constitute the remaining 30%. This inverted value chain stems from the high technological barriers inherent to substrate and epitaxial layer production. Three major challenges plague SiC substrate growth: stringent growth conditions, slow growth rates, and demanding crystallographic requirements. These complexities contribute to increased processing difficulty, ultimately resulting in low product yields and high costs. Furthermore, the epitaxial layer’s thickness and doping concentration are critical parameters directly impacting the final device performance.

Graphite Boat, stands at the forefront of technological innovation in its industry, featuring a suite of groundbreaking advancements designed to enhance performance, purity, and lifespan. Below, we delve into the core technologies that define graphite boat's excellence:

Isostatic pressing technology is a critical process in the manufacturing of isostatic graphite, largely determining the performance of the final product. As such, comprehensive research and optimization of isostatic graphite production remain essential focal points in the industry.