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China Silicon Epitaxial Wafer Manufacturers, Suppliers, Factory

We purpose to understand quality disfigurement in the creation and provide the ideal services to domestic and abroad shoppers wholeheartedly for Silicon Epitaxial Wafer,Etch Carrier(ICP/PSS),SiC Wafer Holder,Silicon Carbide-Coated Wafer Holder,MOCVD Wafer Carrier, Now we have established steady and long business relationships with customers from North America, Western Europe, Africa, South America, more than 60 countries and regions.
Silicon Epitaxial Wafer, During in 11 years, We now have participated in more than 20 exhibitions, obtains the highest praise from each customer. Our company has been devoting that "customer first" and committed to helping customers expand their business, so that they become the Big Boss !

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  • EPI 3 1/4

    EPI 3 1/4" Barrel Susceptor

    Semicorex SiC coating EPI 3 1/4" Barrel Susceptor provides excellent thermal stability and resistance to chemical attack, while the graphite substrate offers superior heat transfer properties.
  • PSS Etching Carrier Tray for Wafer Processing

    PSS Etching Carrier Tray for Wafer Processing

    Semicorex's PSS Etching Carrier Tray for Wafer Processing is specifically designed for the demanding epitaxy equipment applications. Our ultra-pure graphite carrier is ideal for thin-film deposition phases like MOCVD, epitaxy susceptors, pancake or satellite platforms, and wafer handling processing such as etching. The PSS Etching Carrier Tray for Wafer Processing has high heat and corrosion resistance, excellent heat distribution properties, and a high thermal conductivity. Our products are cost-effective and have a good price advantage. We cater to many European and American markets and look forward to becoming your long-term partner in China.
  • SiC Coated MOCVD Susceptor

    SiC Coated MOCVD Susceptor

    Semicorex is a leading manufacturer and supplier of SiC Coated MOCVD Susceptor. Our product is specially designed for semiconductor industries to grow the epitaxial layer on the wafer chip. The high purity Silicon Carbide coated graphite carrier is used as the center plate in MOCVD, with a gear or ring-shaped design. Our susceptor is widely used in MOCVD equipment, ensuring high heat and corrosion resistance, and great stability in extreme environments.
  • LPE Part

    LPE Part

    Semicorex LPE Part is a SiC-coated component specifically designed for the SiC epitaxy process, offering exceptional thermal stability and chemical resistance to ensure efficient operation in high-temperature and harsh environments. By choosing Semicorex products, you benefit from high-precision, long-lasting custom solutions that optimize the SiC epitaxy growth process and enhance production efficiency.*
  • 6

    6" Wafer Holders

    Semicorex 6" Wafer Holders are high-performance carrier engineered for the rigorous demands of SiC epitaxial growth. Choose Semicorex for unmatched material purity, precision engineering, and proven reliability in high-temperature, high-yield SiC processes.*
  • 8 inch EPI Susceptor

    8 inch EPI Susceptor

    Semicorex 8 Inch EPI Susceptor is a high-performance SiC-coated graphite wafer carrier designed for use in epitaxial deposition equipment. Choosing Semicorex ensures superior material purity, precision manufacturing, and consistent product reliability tailored to meet the demanding standards of the semiconductor industry.*
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  • About Semiconductor Heating Elements

    Heat treatment is one of the essential and important processes in the semiconductor process. Thermal process is the process of applying thermal energy to a wafer by placing it in an environment filled with a specific gas, including oxidation/diffusion/annealing, etc.

  • Various applications of quartz in semiconductor manufacturing

    At first glance, quartz (SiO2) material looks very similar to glass, but what is special is that ordinary glass is composed of many components (such as quartz sand, borax, boric acid, barite, barium carbonate, limestone, feldspar, soda ash, etc.), while quartz only contains SiO2, and its microstructure is a simple network composed of silicon dioxide tetrahedral structural units.

  • Silicon Carbide Substrate Core Process Flow

    Silicon carbide substrate is a compound semiconductor single crystal material composed of two elements, carbon and silicon. It has the characteristics of large bandgap, high thermal conductivity, high critical breakdown field strength, and high electron saturation drift rate.

  • The Study on Reaction-Sintered SiC Ceramics and Their Properties

    Silicon carbide (SiC) is a compound formed by covalent bonds between silicon and carbon atoms, known for its excellent wear resistance, thermal shock resistance, corrosion resistance, and high thermal conductivity.

  • Homoepitaxy and Heteroepitaxy Explained Simply

    Homoepitaxy and heteroepitaxy play pivotal roles in material science. Homoepitaxy involves the growth of a crystalline layer on a substrate of the same material, ensuring minimal defects due to perfect lattice matching. In contrast, heteroepitaxy grows a crystalline layer on a different material substrate, which can lead to challenges like lattice mismatch. These processes are crucial in advancing semiconductor devices and thin films. For instance, heteroepitaxy significantly impacts microelectronics and quantum optics, contributing to innovations like Light Emitting Diodes.

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