English
Home > Products
  • Sic Wafer Holder

    • China Sic Wafer Holder Manufacturers, Suppliers, Factory

    Semicorex has been producing Sic Wafer Holder for many years and is one of the professional Sic Wafer Holder manufacturers and Suppliers in China. Once you buy our advanced and durable products which supply bulk packing, we guarantee the large quantity in quick delivery. Over the years, we have provided customers with customized service. Customers are satisfied with our products and excellent service. We sincerely look forward to becoming your reliable long-term business partner! Welcome to buy products from our factory.

    Related Products

    Hot Products

    • Aluminum Nitride Electrostatic Chucks

      Aluminum Nitride Electrostatic Chucks

      Semicorex Aluminum Nitride Electrostatic Chucks offer a compelling combination of properties that make them ideally suited for the demanding requirements of semiconductor wafer processing. Their ability to provide secure and uniform wafer clamping, excellent thermal management, and resistance to harsh processing environments translates into improved device performance, higher yields, and reduced manufacturing costs. We at Semicorex are dedicated to manufacturing and supplying high-performance Aluminum Nitride Electrostatic Chucks that fuse quality with cost-efficiency.**
    • SiC Heating Element Heater Filament SiC Rods

      SiC Heating Element Heater Filament SiC Rods

      Semicorex SiC Heating Element Heater Filament SiC Rods, is a specialized tool used in the handling and processing of semiconductor wafers. This crucial piece of equipment plays a pivotal role in creating the optimal thermal environment necessary for the production of high-quality semiconductor devices. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
    • Alumina Plate Flange

      Alumina Plate Flange

      Semicorex Alumina Plate Flange represents a pinnacle of versatility and performance in ceramic engineering. Crafted from alumina ceramics, a material renowned for its exceptional properties, this flange embodies a perfect amalgamation of robustness, high temperature resistance, and electrical conductivity. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
    • Gas Inlet Ring for Semiconductor Equipment

      Gas Inlet Ring for Semiconductor Equipment

      Semicorex is a large-scale manufacturer and supplier of Silicon Carbide Coated Graphite Susceptor in China. We focus on semiconductor industries such as silicon carbide layers and epitaxy semiconductor. Our Gas Inlet Ring for Semiconductor Equipment has a good price advantage and cover many of the European and American markets. We look forward to becoming your long-term partner in China.
    • MOCVD Planet Susceptor for Semiconductor

      MOCVD Planet Susceptor for Semiconductor

      Semicorex is a trusted name in the semiconductor industry, providing high-quality MOCVD Planet Susceptor for Semiconductor. Our product is designed to meet the specific needs of semiconductor manufacturers looking for a carrier that can deliver excellent performance, stability, and durability. Contact us today to learn more about our product and how we can help you with your semiconductor manufacturing needs.
    • RTP SiC Coating Carrier

      RTP SiC Coating Carrier

      Semicorex RTP SiC Coating Carrier offers superior heat resistance and thermal uniformity, making it the perfect solution for semiconductor wafer processing applications. With its high-quality SiC coated graphite, this product is designed to withstand the harshest deposition environment for epitaxial growth. The high thermal conductivity and excellent heat distribution properties ensure reliable performance for RTA, RTP, or harsh chemical cleaning.
    • Related Blog
    • Reviews

    • GaN Single Crystal

      Semiconductor technology has been the backbone of modern civilization, fundamentally transforming the way we live, work, and interact with the world. It has enabled unprecedented advancements in various fields including information technology, energy, telecommunications, and healthcare. From the microprocessors that power our smartphones and computers, to the sensors in medical devices, and the power electronics in renewable energy systems, semiconductors are at the core of nearly every technological innovation of the past century.

    • What Is Silicon Carbide (SiC)?

      Semiconductor materials can be divided into three generations according to the time sequence. The first generation of germanium, silicon and other common monomaterials, which is characterised by convenient switching, generally used in integrated circuits. The second generation of gallium arsenide, indium phosphide and other compound semiconductors, mainly used for light-emitting and communication materials.

    • Substrate Cutting and Grinding Process

      SiC substrate material is the core of SiC chip. The production process of the substrate is: after obtaining the SiC crystal ingot through single crystal growth; then preparing the SiC substrate requires smoothing, rounding, cutting, grinding (thinning); mechanical polishing, chemical mechanical polishing; and cleaning, testing, etc. Process

    • Understanding Chemical Vapor Deposition (CVD): A Comprehensive Overview

      Chemical Vapor Deposition (CVD) is a versatile thin-film deposition technique widely employed in the semiconductor industry for fabricating high-quality, conformal thin films on various substrates. This process involves chemical reactions of gaseous precursors onto a heated substrate surface, resulting in the formation of a solid thin film. This article delves into the intricacies of CVD, exploring its mechanisms, advantages, limitations, and key applications in semiconductor manufacturing.

    • CVD process for SiC wafer epitaxy

      The CVD process for SiC wafer epitaxy involves the deposition of SiC films onto a SiC substrate using a gas-phase reaction. The SiC precursor gases, typically methyltrichlorosilane (MTS) and ethylene (C2H4), are introduced into a reaction chamber where the SiC substrate is heated to a high temperature (usually between 1400 and 1600 degrees Celsius) under a controlled atmosphere of hydrogen (H2).

    • Oxidation Process

      The most basic stage of all processes is the oxidation process. The oxidation process is to place the silicon wafer in an atmosphere of oxidants such as oxygen or water vapor for high-temperature heat treatment (800~1200℃), and a chemical reaction occurs on the surface of the silicon wafer to form an oxide film (SiO2 film).

    Related Search

    SiC Wafer HolderSiC Wafer Holder for RTP

    Send Inquiry

    Hit enter to search or ESC to close
    X
    We use cookies to offer you a better browsing experience, analyze site traffic and personalize content. By using this site, you agree to our use of cookies. Privacy Policy
    Reject Accept