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Semiconductor Wafer Boat
  • Semiconductor Wafer BoatSemiconductor Wafer Boat
  • Semiconductor Wafer BoatSemiconductor Wafer Boat
  • Semiconductor Wafer BoatSemiconductor Wafer Boat
  • Semiconductor Wafer BoatSemiconductor Wafer Boat
  • Semiconductor Wafer BoatSemiconductor Wafer Boat

Semiconductor Wafer Boat

Semicorex provides wafer boats, pedestals, and custom wafer carriers for both vertical / column and horizontal configurations. We have been manufacturer and supplier of silicon carbide coating film for many years. Our Semiconductor Wafer Boat has a good price advantage and cover most of the European and American markets. We look forward to becoming your long-term partner in China.

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Product Description

Semicorex Semiconductor Wafer Boat is made of sintered silicon carbide ceramic, which has good resistance to corrosion and excellent resistance to high temperatures and thermal shock. Advanced ceramics deliver excellent thermal resistance and plasma durability while mitigating particles and contaminants for high-capacity wafer carriers.
At Semicorex, we focus on providing high-quality, cost-effective Semiconductor Wafer Boat, we prioritize customer satisfaction and provide cost-effective solutions. We look forward to becoming your long-term partner, delivering high-quality products and exceptional customer service.
Contact us today to learn more about our Semiconductor Wafer Boat.


Parameters of Semiconductor Wafer Boat

Technical Properties

Index

Unit

Value

Material Name

Reaction Sintered Silicon Carbide

Pressureless Sintered Silicon Carbide

Recrystallized Silicon Carbide

Composition

RBSiC

SSiC

R-SiC

Bulk Density

g/cm3

3

3.15 ± 0.03

2.60-2.70

Flexural Strength

MPa (kpsi)

338(49)

380(55)

80-90 (20°C) 90-100(1400°C)

Compressive Strength

MPa (kpsi)

1120(158)

3970(560)

> 600

Hardness

Knoop

2700

2800

/

Breaking Tenacity

MPa m1/2

4.5

4

/

Thermal Conductivity

W/m.k

95

120

23

Coefficient of Thermal Expansion

10-6.1/°C

5

4

4.7

Specific Heat

Joule/g 0k

0.8

0.67

/

Max temperature in air

1200

1500

1600

Elastic Modulus

Gpa

360

410

240


The difference between SSiC and RBSiC:

1. Sintering process is different. RBSiC is to infiltrate free Si into silicon carbide at a low temperature, SSiC is formed by natural shrinkage at 2100 degrees.

2. SSiC have smoother surface, higher density and higher strength, for some sealings with more strict surface requirements, SSiC will be better.

3. Different used time under different PH and temperature, SSiC is longer than RBSiC


Features of Semiconductor Wafer Boat

Superior heat resistance & thermal uniformity
Fine SiC crystal coated for a smooth surface
High durability against chemical cleaning
Material is designed so that cracks and delamination do not occur.



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