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Sticking to the principle of "Super Good quality, Satisfactory service" ,We are striving to become an excellent organization partner of you for Epitaxial Tray,Wafer Transfer Boat,Wafer Processing Boat,Semiconductor Wafer Holder,Silicon Wafer Holder, Our goal is always to enable clients comprehend their plans. We have been creating good endeavours to accomplish this win-win scenario and sincerely welcome you to join us.
Epitaxial Tray, We always insist on the management tenet of "Quality is first, Technology is basis, Honesty and Innovation".We've been able to develop new products and solutions continuously to a higher level to satisfy different needs of customers.

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    4" 6" 8" N-type SiC Ingot

    Semicorex provides N-type SiC ingot with 4 inches, 6 inches and 8 inches. We have been manufacturer and supplier of wafers for many years. Our 4" 6" 8" N-type SiC Ingot has a good price advantage and cover most of the European and American markets. We look forward to becoming your long-term partner in China.
  • TaC Coated Graphite Susceptor

    TaC Coated Graphite Susceptor

    Semicorex cutting-edge TaC Coated Graphite Susceptor, a revolutionary component designed to elevate your wafer epitaxial process to new heights of efficiency and precision. Crafted with unparalleled expertise and utilizing state-of-the-art technology, Semicorex TaC Coated Graphite Susceptor is engineered to meet the exacting demands of semiconductor manufacturing.
  • TaC Coating Epitaxial Plate

    TaC Coating Epitaxial Plate

    You can rest assured to buy TaC Coating Epitaxial Plate from our factory. Semicorex TaC (Tantalum Carbide) coating epitaxial plate boasts exceptional heat resistance, making it ideal for applications subjected to high temperatures. Its remarkable ability to withstand heat ensures durability and reliability in demanding environments. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • Bulk SiC Ring

    Bulk SiC Ring

    Semicorex Bulk SiC Ring is a crucial component in semiconductor etching processes, specifically designed for use as an etching ring within advanced semiconductor manufacturing equipment. With our steadfast commitment to providing top-quality products at competitive prices, we are ready to become your long-term partner in China.*
  • Ignition Injector

    Ignition Injector

    Semicorex Ignition Injector, is a high-purity quartz component designed for precise and contamination-free ignition in semiconductor and research applications. Choosing Semicorex ensures not only unmatched quartz material quality but also advanced fabrication expertise that guarantees reliability, safety, and stability in every critical process.*
  • Customized porous ceramic chuck

    Customized porous ceramic chuck

    Customized porous ceramic chuck is the superior workpiece clamping and fixing solution designed exclusively for semiconductor manufacturing. Selecting Semicorex means you will benefit from reliable quality, customization services and increased productivity.
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  • CVD process for SiC wafer epitaxy

    The CVD process for SiC wafer epitaxy involves the deposition of SiC films onto a SiC substrate using a gas-phase reaction. The SiC precursor gases, typically methyltrichlorosilane (MTS) and ethylene (C2H4), are introduced into a reaction chamber where the SiC substrate is heated to a high temperature (usually between 1400 and 1600 degrees Celsius) under a controlled atmosphere of hydrogen (H2).

  • Porous Graphite for High Quality SiC Crystal Growth by PVT Method

    Silicon Carbide (SiC) has emerged as a key material in the field of semiconductor technology, offering exceptional properties that make it highly desirable for various electronic and optoelectronic applications. The production of high-quality SiC single crystals is crucial for advancing the capabilities of devices such as power electronics, LEDs, and high-frequency devices. In this article, we delve into the significance of porous graphite in the Physical Vapor Transport (PVT) method for 4H-SiC single crystal growth.

  • Silicon Carbide(SiC) Crystal Growth Furnace

    Crystal growth is the core link in the production of Silicon Carbide substrates, and the core equipment is the crystal growth furnace. Similar to traditional crystalline silicon-grade crystal growth furnaces, the furnace structure is not very complex and mainly consists of a furnace body, a heating system, a coil transmission mechanism, a vacuum acquisition and measurement system, a gas path system, a cooling system, a control system, etc., among which Thermal field and process conditions determine the quality, size, conductive properties and other key indicators of Silicon Carbide crystals.

  • What is CMP Process

    In semiconductor manufacturing, atomic-level flatness is usually used to describe the global flatness of the wafer, with the unit of nanometers (nm).

  • PECVD Process

    Plasma Enhanced Chemical Vapor Deposition (PECVD) is a widely used technology in chip manufacturing. It utilizes the kinetic energy of electrons within plasma to activate chemical reactions in the gas phase, thereby achieving thin-film deposition.

  • Etching Process Parameters

    Etching is a critical step in chip manufacturing, used to create minute circuit structures on silicon wafers.

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