English
Home > Products> Sic Coated Tray

China Sic Coated Tray Manufacturers, Suppliers, Factory

Semicorex has been producing Sic Coated Tray for many years and is one of the professional Sic Coated Tray manufacturers and Suppliers in China. Once you buy our advanced and durable products which supply bulk packing, we guarantee the large quantity in quick delivery. Over the years, we have provided customers with customized service. Customers are satisfied with our products and excellent service. We sincerely look forward to becoming your reliable long-term business partner! Welcome to buy products from our factory.

Related Products

Hot Products

  • Silicon Pedestal

    Silicon Pedestal

    Semicorex Silicon Pedestal, a often overlooked yet critically important component, plays a vital role in achieving precise and repeatable results in semiconductor diffusion and oxidation processes. The specialized platform, upon which silicon boats rest within high-temperature furnaces, offers unique advantages that directly contribute to enhanced temperature uniformity, improved wafer quality, and ultimately, superior semiconductor device performance.**
  • Semiconductor SiC Components for Epitaxial

    Semiconductor SiC Components for Epitaxial

    Enhance the capabilities and efficiency of your semiconductor equipment with our groundbreaking Semiconductor SiC Components for Epitaxial. These semi-cylindrical components are specifically engineered for the intake section of epitaxial reactors, playing a crucial role in optimizing semiconductor manufacturing processes. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • SiC Wafer Grinding Disk

    SiC Wafer Grinding Disk

    Unlock unparalleled precision in semiconductor wafer surface finishing with our state-of-the-art SiC Wafer Grinding Disk. This essential component is meticulously designed for use in semiconductor equipment, specifically crafted to achieve optimal results in wafer grinding applications. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • Alumina Ceramic Robotic Arm

    Alumina Ceramic Robotic Arm

    Semicorex Alumina Ceramic Robotic Arm, also known as wafer handling ceramic robotic arm or ceramic silicon wafer handling fork, is a high-performance semiconductor equipment component. Its design takes into account the stringent requirements of semiconductor manufacturing. With its high temperature resistance, wear resistance, chemical stability, and excellent electrical insulation properties, the alumina ceramic arm plays an irreplaceable role in the global semiconductor manufacturing industry. We at Semicorex are dedicated to manufacturing and supplying high-performance Alumina Ceramic Robotic Arm that fuse quality with cost-efficiency.**
  • SiC/SiC Ceramic Matrix Composites

    SiC/SiC Ceramic Matrix Composites

    SiC/SiC ceramic matrix composites (CMCs) are an innovative solution to improve aerospace applications, specifically turbine engine components and thermal protection systems. By utilizing SiC, the performance and durability of these critical components can be significantly enhanced, resulting in safer and more efficient aerospace technologies. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • Robot Hand

    Robot Hand

    Semicorex Robot Hand, a pivotal component within the Metal Organic Chemical Vapor Deposition (MOCVD) furnace, stands as a testament to precision engineering and advanced material science. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • Related Blog
  • Reviews

  • MOCVD is the key equipment

  • Introduction to the Silicon Carbide Ion Implantation and Annealing Process

    In traditional silicon power device fabrication, high-temperature diffusion and ion implantation stand as the primary methods for dopant control, each with its advantages and disadvantages. Typically, high-temperature diffusion is characterized by its simplicity, cost-effectiveness, isotropic dopant distribution profiles, and lower introduction of lattice damage. Conversely, ion implantation, though complex and costly, enables precise independent control over dopant concentration and depth but introduces a significant number of point defects and extended defects into the substrate.

  • Differences between SiC crystals with different structures

    Silicon carbide (SiC) is a material that possesses exceptional thermal, physical and chemical stability, exhibiting properties that go beyond those of conventional materials. Its thermal conductivity is an astonishing 84W/(m·K), which is not only higher than copper but also three times that of silicon. This demonstrates its enormous potential for use in thermal management applications.

  • The Critical Role of SiC Substrates and Crystal Growth in the Semiconductor Industry

    Within the silicon carbide (SiC) industry chain, substrate suppliers hold significant leverage, primarily due to value distribution. SiC substrates account for 47% of the total value, followed by epitaxial layers at 23%, while device design and manufacturing constitute the remaining 30%. This inverted value chain stems from the high technological barriers inherent to substrate and epitaxial layer production. Three major challenges plague SiC substrate growth: stringent growth conditions, slow growth rates, and demanding crystallographic requirements. These complexities contribute to increased processing difficulty, ultimately resulting in low product yields and high costs. Furthermore, the epitaxial layer’s thickness and doping concentration are critical parameters directly impacting the final device performance.

  • Wolfspeed Pauses German Semiconductor Plant Construction Plans

    According to reports from German media, U.S. chip manufacturer Wolfspeed is pausing its plans to build a semiconductor plant in Germany.

  • Knowing MOCVD

    MOCVD is a new vapor phase epitaxial growth technology developed on the basis of vapor phase epitaxial growth (VPE).

Send Inquiry

Hit enter to search or ESC to close
X
We use cookies to offer you a better browsing experience, analyze site traffic and personalize content. By using this site, you agree to our use of cookies. Privacy Policy
Reject Accept