English
Home > Products > si wafer suppliers

China si wafer suppliers Manufacturers, Suppliers, Factory

Our growth depends on the superior equipment ,exceptional talents and continuously strengthened technology forces for si wafer suppliers,dummy wafer,silicon substrate price,si wafer,single crystal silicon, We're on the lookout ahead to building positive and effective links while using the providers around the environment. We warmly welcome you to definitely get hold of us to begin discussions on how we will bring this into being.
si wafer suppliers, Based on our automatic production line, steady material purchase channel and quick subcontract systems have been built in mainland China to meet customer's wider and higher requirement in recent years. We have been looking forward to cooperating with more clients worldwide for common development and mutual benefit!Your trust and approval are the best reward for our efforts. Keeping honest, innovative and efficient, we sincerely expect that we can be business partners to create our brilliant future!

Related Products

Hot Products

  • Sapphire Crystal Growth Insulator

    Sapphire Crystal Growth Insulator

    Semicorex Sapphire Crystal Growth Insulator play an indispensable role in the operation of sapphire single crystal furnaces, spearheading critical functions throughout the entirety of the crystal growth process. By maintaining a stable furnace temperature, these components significantly reduce energy loss and enhance the quality of the growing crystals. We at Semicorex are dedicated to manufacturing and supplying high-performance Sapphire Crystal Growth Insulator that fuse quality with cost-efficiency.
  • SiC Coated MOCVD Graphite Satellite Platform

    SiC Coated MOCVD Graphite Satellite Platform

    Semicorex is a reputable supplier and manufacturer of SiC Coated MOCVD Graphite Satellite Platform. Our product is specially designed to cater to the needs of the semiconductor industry in growing the epitaxial layer on the wafer chip. The product is used as the center plate in MOCVD, with a gear or ring-shaped design. It has high heat and corrosion resistance, making it ideal for use in extreme environments.
  • 4 Inch N-type SiC Substrate

    4 Inch N-type SiC Substrate

    Semicorex provides various types of 4H and 6H SiC wafers. We have been manufacturer and supplier of silicon carbide products for many years. Our 4 Inch N-type SiC Substrate has a good price advantage and cover most of the European and American markets. We look forward to becoming your long-term partner in China.
  • TaC Coated Rings

    TaC Coated Rings

    As the professional manufacture, we would like to provide you TaC Coated Rings. Introducing the CVD Tac Coated Ring, a state-of-the-art solution for semiconductor equipment. This cutting-edge product boasts an advanced chemical vapor deposition (CVD) coating that provides exceptional durability and resistance to wear and tear.
  • SiC Diffusion Boat

    SiC Diffusion Boat

    With high-quality material properties, Semicorex SiC Diffusion Boat represents optimal functionality across a broad spectrum of operational parameters: hardness, resilience, and thermal and chemical resistance, etc. This material choice is crucial in reducing contamination risks, protecting wafers, and enduring the demanding conditions present in semiconductor fabrication processes.We at Semicorex are dedicated to manufacturing and supplying high-performance SiC Diffusion Boat that fuse quality with cost-efficiency.**
  • Quartz 12” Boat

    Quartz 12” Boat

    Semicorex Quartz 12” Boat is an essential component in the semiconductor manufacturing process, designed specifically for the safe and efficient handling of 12-inch wafers. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China*.
  • Related Blog
  • Reviews

  • Tantalum carbide coatings in semiconductor industry

    The development of high-powered blue and UV LEDs has enabled the creation of full-color LED TV displays, as well as white LED automotive and domestic lighting. These LEDs are based on Gallium Nitride, which is deposited on substrate wafers supported by CVD SiC-coated graphite susceptor using the MOCVD process.

  • Application of carbon fiber composite

    Carbon fiber (CF) is a type of fibrous material that contains over 95% carbon.

  • Introduction to the Silicon Carbide Ion Implantation and Annealing Process

    In traditional silicon power device fabrication, high-temperature diffusion and ion implantation stand as the primary methods for dopant control, each with its advantages and disadvantages. Typically, high-temperature diffusion is characterized by its simplicity, cost-effectiveness, isotropic dopant distribution profiles, and lower introduction of lattice damage. Conversely, ion implantation, though complex and costly, enables precise independent control over dopant concentration and depth but introduces a significant number of point defects and extended defects into the substrate.

  • Substrate vs. Epitaxy: Key Roles in Semiconductor Manufacturing

    ​In the realms of semiconductor technology and microelectronics, the concepts of substrates and epitaxy hold significant importance. They play critical roles in the manufacturing process of semiconductor devices. This article will delve into the differences between semiconductor substrates and epitaxy, covering their definitions, functions, material structures, and application areas.

  • Infineon Unveils World’s First 300mm Power GaN Wafer

    Recently, Infineon Technologies announced the successful development of the world’s first 300mm power Gallium Nitride (GaN) wafer technology.

  • A Brief History of Silicon Carbide and Applications of Silicon Carbide Coatings

    The history of silicon carbide (SiC) dates back to 1891, when Edward Goodrich Acheson accidentally discovered it while attempting to synthesize artificial diamonds. Acheson heated a mixture of clay (aluminosilicate) and powdered coke (carbon) in an electric furnace. Instead of the expected diamonds, he obtained a bright green crystal adhering to the carbon. This crystal had a hardness second only to diamond, and was thus named carborundum. In 1904, French-Jewish chemist Henri Moissan discovered rare natural silicon carbide minerals while studying meteorite samples from the Diablo Canyon in Arizona, USA. He named these minerals moissanite, and his discovery earned him the 1906 Nobel Prize in Chemistry.

Send Inquiry

Hit enter to search or ESC to close
X
We use cookies to offer you a better browsing experience, analyze site traffic and personalize content. By using this site, you agree to our use of cookies. Privacy Policy
Reject Accept