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    Semicorex Sapphire Crystal Growth Insulator play an indispensable role in the operation of sapphire single crystal furnaces, spearheading critical functions throughout the entirety of the crystal growth process. By maintaining a stable furnace temperature, these components significantly reduce energy loss and enhance the quality of the growing crystals. We at Semicorex are dedicated to manufacturing and supplying high-performance Sapphire Crystal Growth Insulator that fuse quality with cost-efficiency.
  • High-purity Carbon Powder

    High-purity Carbon Powder

    Semicorex High-purity Carbon Powder serves as a crucial precursor in the synthesis of high-purity silicon carbide (SiC) powder and other solid-state carbide materials. It ensures the purity and quality required for advanced applications in the semiconductor, electronics, and ceramics industries. We at Semicorex are dedicated to manufacturing and supplying high-performance High-purity Carbon Powder that fuse quality with cost-efficiency.**
  • Single-crystal Silicon Epi Susceptor

    Single-crystal Silicon Epi Susceptor

    The Single-crystal Silicon Epi Susceptor is an essential component designed for Si-GaN epitaxy processes, which can be tailored to individualized specifications and preferences, providing a bespoke solution that aligns perfectly with specific requirements. Whether it entails modifications in dimensions or adjustments in coating thickness, we possess the capability to design and deliver a product that accommodates diverse process parameters, thereby optimizing performance for targeted applications. Semicorex’s commitment to market-leading quality, allied with competitive fiscal considerations, cements our eagerness to establish partnerships in fulfilling your semiconductor wafer conveyance requisites.
  • Barrel Structure for Semiconductor Epitaxial Reactor

    Barrel Structure for Semiconductor Epitaxial Reactor

    With its exceptional thermal conductivity and heat distribution properties, the Semicorex Barrel Structure for Semiconductor Epitaxial Reactor is the perfect choice for use in LPE processes and other semiconductor manufacturing applications. Its high-purity SiC coating provides superior protection in high-temperature and corrosive environments.
  • SiC Coated Graphite Barrel Susceptor

    SiC Coated Graphite Barrel Susceptor

    If you're looking for a high-performance graphite susceptor for use in semiconductor manufacturing applications, the Semicorex SiC Coated Graphite Barrel Susceptor is the ideal choice. Its exceptional thermal conductivity and heat distribution properties make it the go-to choice for reliable and consistent performance in high-temperature and corrosive environments.
  • Silicon Annealing Boat

    Silicon Annealing Boat

    Semicorex Silicon Annealing Boat, meticulously designed for handling and processing silicon wafers, play a crucial role in achieving high-performance semiconductor devices. Its unique design features and material properties make it essential for critical fabrication steps like diffusion and oxidation, ensuring uniform processing, maximizing yield, and contributing to the overall quality and reliability of semiconductor devices.**
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  • Application of GaN

    There are many types of gallium nitride (GaN), with silicon-based GaN being the most discussed. This technology involves growing GaN materials directly on a silicon substrate.

  • Begin Production of 3C-SiC Wafer

    The thermal conductivity of bulk 3C-SiC, recently measured, is the second-highest among inch-scale large crystals, ranking just below diamond. Silicon carbide (SiC) is a wide bandgap semiconductor extensively used in electronic applications, and it exists in various crystalline forms known as polytypes. Managing high localized heat flux is a significant challenge in power electronics, as it can lead to device overheating and long-term performance and reliability issues.

  • Porous Graphite for SiC Crystal Growth

    Currently, most SiC substrate manufacturers use a new crucible thermal field process design with porous graphite cylinders: placing high-purity SiC particle raw materials between the graphite crucible wall and the porous graphite cylinder, while deepening the entire crucible and increasing the crucible diameter.

  • Silicon Wafer

    Silicon material is a solid material with certain semiconductor electrical properties and physical stability, and provides substrate support for the subsequent integrated circuit manufacturing process. It is a key material for silicon-based integrated circuits. More than 95% of semiconductor devices and more than 90% of integrated circuits in the world are made on silicon wafers.

  • Differences between SiC crystals with different structures

    Silicon carbide (SiC) is a material that possesses exceptional thermal, physical and chemical stability, exhibiting properties that go beyond those of conventional materials. Its thermal conductivity is an astonishing 84W/(m·K), which is not only higher than copper but also three times that of silicon. This demonstrates its enormous potential for use in thermal management applications.

  • What Is Silicon Carbide (SiC)?

    Semiconductor materials can be divided into three generations according to the time sequence. The first generation of germanium, silicon and other common monomaterials, which is characterised by convenient switching, generally used in integrated circuits. The second generation of gallium arsenide, indium phosphide and other compound semiconductors, mainly used for light-emitting and communication materials.

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