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    • China Single Crystal Silicon Manufacturers, Suppliers, Factory

    Semicorex has been producing Single Crystal Silicon for many years and is one of the professional Single Crystal Silicon manufacturers and Suppliers in China. Once you buy our advanced and durable products which supply bulk packing, we guarantee the large quantity in quick delivery. Over the years, we have provided customers with customized service. Customers are satisfied with our products and excellent service. We sincerely look forward to becoming your reliable long-term business partner! Welcome to buy products from our factory.

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    • 8 Inch N-type SiC Wafer

      8 Inch N-type SiC Wafer

      Semicorex provides various types of 4H and 6H SiC wafers. We have been manufacturer and supplier of wafers for many years. Our 8 Inch N-type SiC Wafer has a good price advantage and cover most of the European and American markets. We look forward to becoming your long-term partner in China.
    • Porous Graphite with TaC Coating

      Porous Graphite with TaC Coating

      Semicorex Porous Graphite with TaC Coating is a specialized material designed to address critical challenges in the growth of Silicon Carbide (SiC) crystals. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China*.
    • SiC Wafer Transfer Hand

      SiC Wafer Transfer Hand

      Semicorex SiC Wafer Transfer Hand stands as a cornerstone of automation within the semiconductor manufacturing process, serving as a sophisticated robotic tool for the precise and efficient handling of semiconductor wafers. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
    • CVD SiC Coated Graphite Susceptor

      CVD SiC Coated Graphite Susceptor

      Semicorex CVD SiC Coated Graphite Susceptor, is a specialized tool used in the handling and processing of semiconductor wafers. The susceptor plays a crucial role in facilitating the growth of thin films, epitaxial layers, and other coatings on substrates with precise control over temperature and material properties. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
    • Etching Ring

      Etching Ring

      The Etching Ring made of CVD SiC is an essential component in the semiconductor manufacturing process, offering exceptional performance in plasma etching environments. With its superior hardness, chemical resistance, thermal stability, and high purity, CVD SiC ensures that the etching process is precise, efficient, and reliable. By choosing Semicorex CVD SiC Etching Rings, semiconductor manufacturers can enhance the longevity of their equipment, reduce downtime, and improve the overall quality of their products.*
    • SOI Wafer Silicon On Insulator

      SOI Wafer Silicon On Insulator

      Semicorex SOI Wafer Silicon On Insulator is a specialized type of semiconductor wafer used in the production of advanced integrated circuits. They are designed to improve the performance, power efficiency, and reliability of electronic devices. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
    • Related Blog
    • Reviews

    • Purification Technology of Graphite in SiC semiconductor

      Graphite is vital in producing Silicon Carbide (SiC) semiconductors, known for their exceptional thermal and electrical properties. This makes SiC ideal for high-power, high-temperature, and high-frequency applications. In SiC semiconductor manufacturing, graphite is commonly used for crucibles, heaters, and other high-temperature processing components due to its excellent thermal conductivity, chemical stability, and resistance to thermal shock.

    • Wolfspeed Pauses German Semiconductor Plant Construction Plans

      According to reports from German media, U.S. chip manufacturer Wolfspeed is pausing its plans to build a semiconductor plant in Germany.

    • Final polishing of the silicon wafer surface

      To achieve the high-quality requirements of IC chip circuit processes with line widths smaller than 0.13μm to 28nm for 300mm diameter silicon polishing wafers, it is essential to minimize contamination from impurities, such as metal ions, on the wafer's surface.

    • MOCVD is the key equipment

    • Difficulties in GaN preparation

      As a third-generation semiconductor material, Gallium Nitride is often compared with Silicon Carbide. Gallium Nitride still demonstrates its superiority with its large bandgap, high breakdown voltage, high thermal conductivity, high saturated electron drift velocity and strong radiation resistance. But it is undeniable that, like Silicon Carbide, Gallium Nitride also has various technical difficulties.

    • Challenges of Ion Implantation Technology in SiC and GaN Power Devices

      Wide bandgap (WBG) semiconductors such as Silicon Carbide (SiC) and Gallium Nitride (GaN) are expected to play an increasingly important role in power electronic devices. They offer several advantages over traditional Silicon (Si) devices, including higher efficiency, power density, and switching frequency. Ion implantation is the primary method for achieving selective doping in Si devices. However, there are some challenges when applying it to wide bandgap devices. In this article, we will focus on some of these challenges and summarize their potential applications in GaN power devices.

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    IC Single Crystal SiliconSingle Crystal Silicon CarbideSingle Crystal Silicon Wafer

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