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China sapphire crystal growth furnace Manufacturers, Suppliers, Factory

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Hot Products

SiC-Coated Crystal Growth Susceptor
With its high melting point, oxidation resistance, and corrosion resistance, the Semicorex SiC-Coated Crystal Growth Susceptor is the ideal choice for use in single crystal growth applications. Its silicon carbide coating provides excellent flatness and heat distribution properties, making it an ideal choice for high-temperature environments.
Barrel Susceptor Epi System
Semicorex Barrel Susceptor Epi System is a high-quality product that offers superior coating adhesion, high purity, and high-temperature oxidation resistance. Its even thermal profile, laminar gas flow pattern, and prevention of contamination make it an ideal choice for the growth of epixial layers on wafer chips. Its cost-effectiveness and customizability make it a highly competitive product in the market.
Silicon Etch Plate for PSS Etching Applications
Semicorex's Silicon Etch Plate for PSS Etching Applications is a high-quality, ultra-pure graphite carrier that is specifically designed for epitaxial growth and wafer handling processes. Our carrier can withstand harsh environments, high temperatures, and harsh chemical cleaning. The silicon etch plate for PSS etching applications has excellent heat distribution properties, high thermal conductivity, and is cost-effective. Our products are widely used in many European and American markets, and we look forward to becoming your long-term partner in China.
SiC Coated MOCVD Graphite Satellite Platform
Semicorex is a reputable supplier and manufacturer of SiC Coated MOCVD Graphite Satellite Platform. Our product is specially designed to cater to the needs of the semiconductor industry in growing the epitaxial layer on the wafer chip. The product is used as the center plate in MOCVD, with a gear or ring-shaped design. It has high heat and corrosion resistance, making it ideal for use in extreme environments.
TaC Coated Wafer Susceptor
Semicorex TaC Coated Wafer Susceptor is a crucial component used in Metal-Organic Chemical Vapor Deposition (MOCVD) furnaces for semiconductor epitaxial (epi) processing. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
TaC Coating Epitaxial Plate
You can rest assured to buy TaC Coating Epitaxial Plate from our factory. Semicorex TaC (Tantalum Carbide) coating epitaxial plate boasts exceptional heat resistance, making it ideal for applications subjected to high temperatures. Its remarkable ability to withstand heat ensures durability and reliability in demanding environments. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.

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Reviews

Substrate Cutting and Grinding Process
SiC substrate material is the core of SiC chip. The production process of the substrate is: after obtaining the SiC crystal ingot through single crystal growth; then preparing the SiC substrate requires smoothing, rounding, cutting, grinding (thinning); mechanical polishing, chemical mechanical polishing; and cleaning, testing, etc. Process
The significance of porous graphite materials to SiC crystal growth
Semicorex's SiC crystal growth furnace component, the porous graphite barrel, will bring three major benefits and can effectively strengthen the competitiveness of domestic SiC substrates:
The Study on the Distribution of Electrical Resistivity in n-Type 4H-SiC Crystals
4H-SiC, as a third-generation semiconductor material, is renowned for its wide bandgap, high thermal conductivity, and excellent chemical and thermal stability, making it highly valuable in high-power and high-frequency applications.
Achieving High-Quality SiC Crystal Growth through Temperature Gradient Control in the Initial Growth Phase
Silicon carbide (SiC) is a wide-bandgap semiconductor material that has garnered significant attention in recent years due to its exceptional performance in high-voltage and high-temperature applications. This study systematically explores the various characteristics of SiC crystals grown using modified process conditions.
Crystal Orientation and Defects in Silicon Wafers
The basic crystal unit cell of monocrystalline silicon is the zinc blende structure, in which each silicon atom bonds chemically with four neighboring silicon atoms. This structure is also found in monocrystalline carbon diamonds.
Etching Process Parameters
Etching is a critical step in chip manufacturing, used to create minute circuit structures on silicon wafers.

China sapphire crystal growth furnace Manufacturers, Suppliers, Factory

Related Products

Hot Products

SiC-Coated Crystal Growth Susceptor

Barrel Susceptor Epi System

Silicon Etch Plate for PSS Etching Applications

SiC Coated MOCVD Graphite Satellite Platform

TaC Coated Wafer Susceptor

TaC Coating Epitaxial Plate

Substrate Cutting and Grinding Process

The significance of porous graphite materials to SiC crystal growth

The Study on the Distribution of Electrical Resistivity in n-Type 4H-SiC Crystals

Achieving High-Quality SiC Crystal Growth through Temperature Gradient Control in the Initial Growth Phase

Crystal Orientation and Defects in Silicon Wafers

Etching Process Parameters

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