SiC Cutting

Silicon carbide (SiC) is highly favored in the semiconductor industry for its excellent physical and chemical properties. However, the high hardness and brittleness of SiC pose considerable challenges to its processing.

Diamond wire cutting is a commonly used SiC cutting method and is suitable for the preparation of large-size SiC wafers.

Advantage:

High efficiency: With its fast cutting speed, diamond wire cutting technology has become the preferred method for mass production of large-size SiC wafers, significantly improving production efficiency.

Low thermal damage: Compared with traditional cutting methods, diamond wire cutting generates less heat during operation, effectively reducing thermal damage to SiC crystals and maintaining the integrity of the material.

Good surface quality: The surface roughness of the SiC wafer obtained after cutting is low, which provides a good foundation for subsequent grinding and polishing processes and helps achieve higher quality surface treatment.

shortcoming:

High equipment cost: Diamond wire cutting equipment requires a high initial investment and maintenance costs are also high, which may increase the overall production cost.

Wire loss: The diamond wire will wear out during the continuous cutting process and needs to be replaced regularly, which not only increases the material cost, but also increases the maintenance workload.

Limited cutting accuracy: Although diamond wire cutting performs well in regular applications, its cutting accuracy may not meet more stringent requirements where complex shapes or microstructures need to be processed.

Despite some challenges, diamond wire cutting technology remains a powerful tool in SiC wafer manufacturing. As technology continues to advance and cost-effectiveness improves, this method is expected to play a greater role in SiC wafer processing in the future.