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    • China robotic arms for manufacturing Manufacturers, Suppliers, Factory

    Semicorex has been producing robotic arms for manufacturing for many years and is one of the professional robotic arms for manufacturing manufacturers and Suppliers in China. Once you buy our advanced and durable products which supply bulk packing, we guarantee the large quantity in quick delivery. Over the years, we have provided customers with customized service. Customers are satisfied with our products and excellent service. We sincerely look forward to becoming your reliable long-term business partner! Welcome to buy products from our factory.

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    • CVD-SiC Showerhead

      CVD-SiC Showerhead

      Semicorex CVD-SiC showerhead provides durability, excellent thermal management, and resistance to chemical degradation, making it a suitable choice for demanding CVD processes in the semiconductor industry. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
    • Silicon Epitaxial Deposition In Barrel Reactor

      Silicon Epitaxial Deposition In Barrel Reactor

      If you need a high-performance graphite susceptor for use in semiconductor manufacturing applications, the Semicorex Silicon Epitaxial Deposition In Barrel Reactor is the ideal choice. Its high-purity SiC coating and exceptional thermal conductivity provide superior protection and heat distribution properties, making it the go-to choice for reliable and consistent performance in even the most challenging environments.
    • RTP/RTA SiC Coating Carrier

      RTP/RTA SiC Coating Carrier

      Semicorex RTP/RTA SiC Coating Carrier is engineered to withstand the toughest conditions of the deposition environment. With its high heat and corrosion resistance, this product is designed to provide optimal performance for epitaxial growth. The SiC coated carrier has a high thermal conductivity and excellent heat distribution properties, ensuring reliable performance for RTA, RTP, or harsh chemical cleaning.
    • SiC Coating Graphite Substrate Wafer Carriers for MOCVD

      SiC Coating Graphite Substrate Wafer Carriers for MOCVD

      You can rest assured to buy SiC Coating Graphite Substrate Wafer Carriers for MOCVD from our factory. At Semicorex, we are a large-scale manufacturer and supplier of SiC Coated Graphite Susceptor in China. Our product has a good price advantage and covers many of the European and American markets. We strive to provide our customers with high-quality products that meet their specific requirements. Our SiC Coating Graphite Substrate Wafer Carrier for MOCVD is an excellent choice for those looking for a high-performance carrier for their semiconductor manufacturing process.
    • Wafer Boat for Semiconductor Process

      Wafer Boat for Semiconductor Process

      Semicorex provides wafer boats, pedestals, and custom wafer carriers for both vertical / column and horizontal configurations. We have been manufacturer and supplier of silicon carbide coating film for many years. Our Wafer Boat for Semiconductor Process has a good price advantage and cover most of the European and American markets. We look forward to becoming your long-term partner in China.
    • Aluminum Nitride Insulator Rings

      Aluminum Nitride Insulator Rings

      Semicorex Aluminum Nitride Insulator Rings are indispensable components in advanced semiconductor manufacturing, particularly in high-frequency heat treatment processes. Their unique combination of high-temperature stability, superior sealing properties, exceptional thermal conductivity, and inherent durability makes them essential for ensuring precise process control, high device yields, and extended equipment lifespan in the demanding environment of semiconductor fabrication. We at Semicorex are dedicated to manufacturing and supplying high-performance Aluminum Nitride Insulator Rings that fuse quality with cost-efficiency.**
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    • What is cantilever paddles?

      The wafer boats, loaded with a batch of wafers to be processed, are positioned on long cantilevered paddles.

    • High-Purity CVD Thick SiC: Process Insights for Material Growth

      Thick, high-purity silicon carbide (SiC) layers, typically exceeding 1mm, are critical components in various high-value applications, including semiconductor fabrication and aerospace technologies. This article delves into the Chemical Vapor Deposition (CVD) process for producing such layers, highlighting key process parameters, material characteristics, and emerging applications.

    • Research Progress of TaC Coatings on Carbon-Based Material Surfaces

      Carbon-based materials such as graphite, carbon fibers, and carbon/carbon (C/C) composites are known for their high specific strength, high specific modulus, and excellent thermal properties, making them suitable for a wide range of high-temperature applications. These materials are widely utilized in aerospace, chemical engineering, and energy storage. However, their susceptibility to oxidation and corrosion in high-temperature environments, along with poor scratch resistance, restricts their further application.

    • What are the challenges of silicon carbide substrate production?

      Silicon carbide (SiC) is a material that possesses high bond energy, similar to other hard materials like diamond and cubic boron nitride. However, the high bond energy of SiC makes it difficult to crystallize directly into ingots via traditional melting methods. Therefore, the process of growing silicon carbide crystals involves the use of vapor phase epitaxy technology.

    • Epitaxial Layers: The Foundation of Advanced Semiconductor Devices

      In the semiconductor industry, epitaxial layers play a crucial role by forming specific single-crystal thin films atop a wafer substrate, collectively known as epitaxial wafers. Particularly, silicon carbide (SiC) epitaxial layers grown on conductive SiC substrates produce homogenous SiC epitaxial wafers, which are instrumental in the fabrication of power devices such as Schottky diodes, MOSFETs, and IGBTs, with 4H-SiC substrates being the most widely utilized.

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