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Having a positive and progressive attitude to customer's fascination, our organization constantly improves our solution high-quality to fulfill the requirements of shoppers and further focuses on safety, reliability, environmental prerequisites, and innovation of plasma etching,cvd sic process,icp rie,dry etching,wafer etching, Looking to the long run, a lengthy way to go, regularly striving to become the all employees with full enthusiasm, one hundred times the confidence and put our company built a beautiful environment, advanced merchandise, good quality first-class modern company and work hard!
plasma etching, we rely on own advantages to build a mutual-benefit commerce mechanism with our cooperative partners. As a result, we have gained a global sales network reaching the Middle East, Turkey, Malaysia and Vietnamese.

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  • CVD TaC Coated Ring

    CVD TaC Coated Ring

    Semicorex CVD TaC Coated Ring reigns as a critical component in semiconductor processing, symbolizing the zenith of modern materials engineering. Crafted for implementation in the most rigorous environments where precision and reliability reign supreme, this ring embodies the fusion of cutting-edge coating techniques with resilient material science. Semicorex steadfastly delivers top-tier products at competitive prices, and we eagerly anticipate forging a longstanding partnership with you in China.*
  • SiC Coated Barrel Susceptor for Wafer Epitaxial

    SiC Coated Barrel Susceptor for Wafer Epitaxial

    The Semicorex SiC Coated Barrel Susceptor for Wafer Epitaxial is the perfect choice for single crystal growth applications, thanks to its exceptionally flat surface and high-quality SiC coating. Its high melting point, oxidation resistance, and corrosion resistance make it an ideal choice for use in high-temperature and corrosive environments.
  • MOCVD Vacuum Chamber Lid

    MOCVD Vacuum Chamber Lid

    MOCVD Vacuum Chamber Lid used in crystal growth and wafer handling processing must endure high temperatures and harsh chemical cleaning. Semicorex Silicon Carbide Coated MOCVD Vacuum Chamber Lid engineered specifically stand up to these challenging environments. Our products have a good price advantage and cover many of the European and American markets. We look forward to becoming your long-term partner in China.
  • SiC Barrel for Silicon Epitaxy

    SiC Barrel for Silicon Epitaxy

    Semicorex SiC Barrel For Silicon Epitaxy is a engineered to meet the demanding requirements of Applied Materials and LPE units. Crafted with precision and innovation, this barrel-shaped susceptor is manufactured from high-quality SiC-coated graphite, ensuring exceptional performance and durability in silicon epitaxy applications. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • 4

    4" 6" High Purity Semi-Insulating SiC Ingot

    Semicorex provides high purity semi-insulating SiC ingot with 4 inches and 6 inches. We have been manufacturer and supplier of wafers for many years. Our 4" 6" High Purity Semi-Insulating SiC Ingot has a good price advantage and cover most of the European and American markets. We look forward to becoming your long-term partner in China.
  • Electrostatic Chuck

    Electrostatic Chuck

    Semicorex Electrostatic Chuck (ESC) is an advanced component used in semiconductor manufacturing, designed to securely hold semiconductor wafers during various processing stages. With our commitment to delivering top-quality products at competitive prices, we are poised to be your long-term partner in China.*
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  • TaC Coating Crucible for AlN Crystal Growth

    The third generation of semiconductor materials AlN belongs to the direct bandgap semiconductor, its bandwidth of 6.2 eV, with high thermal conductivity, resistivity, breakdown field strength, as well as excellent chemical and thermal stability, is not only an important blue light, ultraviolet materials, or electronic devices and integrated circuits, important packaging, dielectric isolation and insulation materials, especially for high-temperature high-power devices. In addition, AlN and GaN have a good thermal match and chemical compatibility, AlN used as GaN epitaxial substrate, can significantly reduce the defect density in GaN devices, improve device performance.

  • How is Silicon Carbide Ceramic Applied and What is its Future in Wear and High-Temperature Resistance?

    Silicon carbide (SiC) ceramics, known for their high strength, hardness, wear resistance, corrosion resistance, and high-temperature stability, have demonstrated immense potential and value across numerous industrial sectors since their introduction.

  • What is porous graphite?

    Porous graphite, also known as porous carbon or porous graphite material, is a graphite form that has been specially engineered to have an interconnected network of pores or voids within its structure.

  • Core Material for SiC Growth: Tantalum Carbide Coating

    The current third-generation semiconductors are primarily based on Silicon Carbide, with substrates accounting for 47% of device costs, and epitaxy accounting for 23%, totaling approximately 70% and forming the most crucial part of the SiC device manufacturing industry.

  • Demystifying Electrostatic Chuck (ESC) Technology in Wafer Handling

    Electrostatic chucks (ESCs) have become indispensable in semiconductor manufacturing and flat panel display production, offering a damage-free, highly controllable method for holding and positioning delicate wafers and substrates during critical processing steps. This article delves into the intricacies of ESC technology, exploring its principles of operation, various adhesion mechanisms, and fundamental structural components.

  • Challenges of Ion Implantation Technology in SiC and GaN Power Devices

    Wide bandgap (WBG) semiconductors such as Silicon Carbide (SiC) and Gallium Nitride (GaN) are expected to play an increasingly important role in power electronic devices. They offer several advantages over traditional Silicon (Si) devices, including higher efficiency, power density, and switching frequency. Ion implantation is the primary method for achieving selective doping in Si devices. However, there are some challenges when applying it to wide bandgap devices. In this article, we will focus on some of these challenges and summarize their potential applications in GaN power devices.

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