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    • China plasma etching machine Manufacturers, Suppliers, Factory

    Semicorex has been producing plasma etching machine for many years and is one of the professional plasma etching machine manufacturers and Suppliers in China. Once you buy our advanced and durable products which supply bulk packing, we guarantee the large quantity in quick delivery. Over the years, we have provided customers with customized service. Customers are satisfied with our products and excellent service. We sincerely look forward to becoming your reliable long-term business partner! Welcome to buy products from our factory.

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    • TaC Coating Guide Rings

      TaC Coating Guide Rings

      TaC Coating Guide Rings are graphite ring with a tantalum carbide coating, designed for use in silicon carbide crystal growth furnaces to enhance crystal quality. Choose Semicorex for its advanced coating technology, ensuring superior durability, thermal stability, and optimized crystal growth performance.*
    • Alumina Tube

      Alumina Tube

      Semicorex Alumina Tube is a pivotal component in a variety of industrial applications, renowned for its ability to withstand harsh environments and high temperatures.**
    • Barrel Susceptor with SiC Coating in Semiconductor

      Barrel Susceptor with SiC Coating in Semiconductor

      If you're looking for a high-quality graphite susceptor coated with high-purity SiC, the Semicorex Barrel Susceptor with SiC Coating in Semiconductor is the perfect choice. Its exceptional thermal conductivity and heat distribution properties make it ideal for use in semiconductor manufacturing applications.
    • PSS Etching Carrier Tray for LED

      PSS Etching Carrier Tray for LED

      At Semicorex, we have designed the PSS Etching Carrier Tray for LED specifically for the harsh environments required for epitaxial growth and wafer handling processes. Our ultra-pure graphite carrier is ideal for thin-film deposition phases like MOCVD, epitaxy susceptors, pancake or satellite platforms, and wafer handling processing such as etching. The SiC coated carrier has high heat and corrosion resistance, excellent heat distribution properties, and a high thermal conductivity. Our PSS Etching Carrier Tray for LED is cost-effective and offer a good price advantage. We cater to many European and American markets and look forward to becoming your long-term partner in China.
    • Plasma Processing Focus Ring

      Plasma Processing Focus Ring

      Semicorex Plasma processing focus ring is specially designed to meet the high demands of plasma etch processing in the semiconductor industry. Our advanced, high-purity Silicon Carbide Coated Components are built to withstand extreme environments and are suitable for use in various applications, including silicon carbide layers and epitaxy semiconductors.
    • TaC Coated Graphite Susceptor

      TaC Coated Graphite Susceptor

      Semicorex cutting-edge TaC Coated Graphite Susceptor, a revolutionary component designed to elevate your wafer epitaxial process to new heights of efficiency and precision. Crafted with unparalleled expertise and utilizing state-of-the-art technology, Semicorex TaC Coated Graphite Susceptor is engineered to meet the exacting demands of semiconductor manufacturing.
    • Related Blog
    • Reviews

    • Achieving High-Quality SiC Crystal Growth through Temperature Gradient Control in the Initial Growth Phase

      Silicon carbide (SiC) is a wide-bandgap semiconductor material that has garnered significant attention in recent years due to its exceptional performance in high-voltage and high-temperature applications. This study systematically explores the various characteristics of SiC crystals grown using modified process conditions.

    • What are the challenges of silicon carbide substrate production?

      Silicon carbide (SiC) is a material that possesses high bond energy, similar to other hard materials like diamond and cubic boron nitride. However, the high bond energy of SiC makes it difficult to crystallize directly into ingots via traditional melting methods. Therefore, the process of growing silicon carbide crystals involves the use of vapor phase epitaxy technology.

    • SiC Ceramics: The Indispensable Material for High-Precision Components in Semiconductor Manufacturing

      Semiconductor manufacturing, the cornerstone of modern technological advancement, is in constant pursuit of smaller, faster, and more efficient integrated circuits. This relentless pursuit drives the need for increasingly precise and sophisticated manufacturing processes, where each step relies heavily on high-performance, high-quality, and high-precision equipment. Silicon carbide (SiC), a high-performance structural ceramic material, plays a crucial role in this demanding environment.

    • Main steps in SiC substrate processing

      The processing of 4H-SiC substrate mainly includes the following steps:

    • Oxidation Process

      The most basic stage of all processes is the oxidation process. The oxidation process is to place the silicon wafer in an atmosphere of oxidants such as oxygen or water vapor for high-temperature heat treatment (800~1200℃), and a chemical reaction occurs on the surface of the silicon wafer to form an oxide film (SiO2 film).

    • Begin Production of 3C-SiC Wafer

      The thermal conductivity of bulk 3C-SiC, recently measured, is the second-highest among inch-scale large crystals, ranking just below diamond. Silicon carbide (SiC) is a wide bandgap semiconductor extensively used in electronic applications, and it exists in various crystalline forms known as polytypes. Managing high localized heat flux is a significant challenge in power electronics, as it can lead to device overheating and long-term performance and reliability issues.

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