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  • Inlet Connection Ring

    • China Inlet Connection Ring Manufacturers, Suppliers, Factory

    Semicorex has been producing Inlet Connection Ring for many years and is one of the professional Inlet Connection Ring manufacturers and Suppliers in China. Once you buy our advanced and durable products which supply bulk packing, we guarantee the large quantity in quick delivery. Over the years, we have provided customers with customized service. Customers are satisfied with our products and excellent service. We sincerely look forward to becoming your reliable long-term business partner! Welcome to buy products from our factory.

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    • SiC Coated Graphite Barrel Susceptor

      SiC Coated Graphite Barrel Susceptor

      If you're looking for a high-performance graphite susceptor for use in semiconductor manufacturing applications, the Semicorex SiC Coated Graphite Barrel Susceptor is the ideal choice. Its exceptional thermal conductivity and heat distribution properties make it the go-to choice for reliable and consistent performance in high-temperature and corrosive environments.
    • 850V High Power GaN-on-Si Epi Wafer

      850V High Power GaN-on-Si Epi Wafer

      Semicorex provides 850V High Power GaN-on-Si Epi Wafer. Compared to other substrates for HMET power devices, 850V High Power GaN-on-Si Epi Wafer enables larger sizes and more diversified applications, and can be quickly introduced into the mainstream fabs' silicon-based chip. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
    • Tantalum Carbide Coating Chuck

      Tantalum Carbide Coating Chuck

      Semicorex Tantalum Carbide Coating Chuck is a precision-engineered component designed for use in high-temperature and high-stress environments. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
    • Silicon Carbide Coating Graphite Susceptor for MOCVD

      Silicon Carbide Coating Graphite Susceptor for MOCVD

      Semicorex is a trusted supplier and manufacturer of silicon carbide coating graphite susceptor for MOCVD. Our product is specially designed to cater to the needs of the semiconductor industry in growing the epitaxial layer on the wafer chip. The product is used as the center plate in MOCVD, with a gear or ring-shaped design. It has high heat and corrosion resistance, making it ideal for use in extreme environments.
    • SiC Coated Epitaxy Disc

      SiC Coated Epitaxy Disc

      There are extensive properties of Semicorex SiC Coated Epitaxy Disc that make it an indispensable component in semiconductor manufacturing, where the precision, durability, and robustness of equipment are paramount for the success of high-tech semiconductor devices. We at Semicorex are dedicated to manufacturing and supplying high-performance SiC Coated Epitaxy Disc that fuse quality with cost-efficiency.**
    • Ceramic Wafer Carrier

      Ceramic Wafer Carrier

      Semicorex provides semiconductor-grade ceramics for your OEM semi fabrication tools and wafer handling components focusing on silicon carbide layers in semiconductor industries. We have been manufacturer and supplier of Ceramic Wafer Carrier for many years. Our products have a good price advantage and cover most of the European and American markets. We look forward to becoming your long-term partner in China.
    • Related Blog
    • Reviews

    • Differences between SiC crystals with different structures

      Silicon carbide (SiC) is a material that possesses exceptional thermal, physical and chemical stability, exhibiting properties that go beyond those of conventional materials. Its thermal conductivity is an astonishing 84W/(m·K), which is not only higher than copper but also three times that of silicon. This demonstrates its enormous potential for use in thermal management applications.

    • Challenges of Ion Implantation Technology in SiC and GaN Power Devices

      Wide bandgap (WBG) semiconductors such as Silicon Carbide (SiC) and Gallium Nitride (GaN) are expected to play an increasingly important role in power electronic devices. They offer several advantages over traditional Silicon (Si) devices, including higher efficiency, power density, and switching frequency. Ion implantation is the primary method for achieving selective doping in Si devices. However, there are some challenges when applying it to wide bandgap devices. In this article, we will focus on some of these challenges and summarize their potential applications in GaN power devices.

    • What is quartz?

      Quartz (SiO₂) material is very similar to glass at first glance, but the special thing is that the general glass is made up of many components (such as quartz sand, borax, boric acid, barite, barium carbonate, limestone, feldspar, soda ash, etc.), while the quartz contains only SiO₂ components, and the microstructure of its silicon dioxide tetrahedral structural units composed of a simple network.

    • Introduction to Third-Generation Semiconductors: GaN and Related Epitaxial Technologies

      GaN materials gained prominence following the awarding of the 2014 Nobel Prize in Physics for blue LEDs. Initially entering the public eye through fast-charging applications in consumer electronics, GaN-based power amplifiers and RF devices have also quietly emerged as critical components in 5G base stations. In recent years, GaN-based automotive-grade power devices have shown promise, potentially opening new growth avenues for GaN material applications.

    • What is cantilever paddles?

      The wafer boats, loaded with a batch of wafers to be processed, are positioned on long cantilevered paddles.

    • SiC Epitaxy

      There are two types of epitaxy: homogeneous and heterogeneous. In order to produce SiC devices with specific resistance and other parameters for different applications, the substrate must meet the conditions of epitaxy before production can begin. The quality of the epitaxy affects the device's performance.

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