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We are also focusing on improving the stuff management and QC system so that we could keep great advantage in the fiercely-competitive business for graphite casting molds,graphite companies,isostatic graphite,extruded graphite,custom graphite molds, Our organization has been devoting that "customer first" and committed to helping clients expand their small business, so that they become the Big Boss !
graphite casting molds, Our objects have national accreditation requirements for qualified, high quality products and solutions, affordable value, was welcomed by people today all over the world. Our goods will continue to enhance within the order and look forward to cooperation with you, Need to any of those goods be of interest to you, be sure to letus know. We've been gonna be content to offer you a quotation up on receipt of your detailed needs.

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  • TaC Coated Crucible

    TaC Coated Crucible

    Introducing the CVD Tac coated crucible, the perfect solution for semiconductor equipment manufacturers and users who demand the highest level of quality and performance. Our crucibles are coated with a state-of-the-art CVD Tac (tantalum carbide) layer, which provides superior resistance to corrosion and wear, making them ideal for use in a variety of semiconductor applications.
  • CVD SiC Coated Barrel Susceptor

    CVD SiC Coated Barrel Susceptor

    Semicorex CVD SiC Coated Barrel Susceptor is a meticulously engineered component tailored for advanced semiconductor manufacturing processes, particularly epitaxy. Our products have a good price advantage and cover most of the European and American markets. We look forward to becoming your long-term partner in China.
  • TaC Coating Epitaxial Plate

    TaC Coating Epitaxial Plate

    You can rest assured to buy TaC Coating Epitaxial Plate from our factory. Semicorex TaC (Tantalum Carbide) coating epitaxial plate boasts exceptional heat resistance, making it ideal for applications subjected to high temperatures. Its remarkable ability to withstand heat ensures durability and reliability in demanding environments. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • Wafer Carrier for MOCVD

    Wafer Carrier for MOCVD

    the Semicorex Wafer Carrier for MOCVD, Crafted for the precise needs of Metal Organic Chemical Vapor Deposition (MOCVD), emerges as an indispensable tool in the processing of single-crystal Si or SiC for high-scale integrated circuits. The Wafer Carrier for MOCVD composition boasts unparalleled purity, resistance to elevated temperatures and corrosive environments, and superior sealing properties to maintain a pristine atmosphere. We at Semicorex are dedicated to manufacturing and supplying high-performance Wafer Carriers for MOCVD that fuse quality with cost-efficiency.
  • Tantalum Carbide Coating Chuck

    Tantalum Carbide Coating Chuck

    Semicorex Tantalum Carbide Coating Chuck is a precision-engineered component designed for use in high-temperature and high-stress environments. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • SiC Coated Wafer Carriers

    SiC Coated Wafer Carriers

    Semicorex SiC Coated Wafer Carriers are high-purity graphite susceptors coated with CVD silicon carbide, designed for optimal wafer support during high-temperature semiconductor processes. Choose Semicorex for unmatched coating quality, precision manufacturing, and proven reliability trusted by leading semiconductor fabs worldwide.*
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  • Why choose liquid phase epitaxy method?

    Compared with the PVT method, the liquid phase method for growing SiC has the following advantages:

  • About defects in SiC crystals - Micropipe

    SiC substrate can have microscopic defects, such as Threading Screw Dislocation (TSD), Threading Edge Dislocation (TED), Base Plane Dislocation (BPD), and others. These defects are caused by deviations in the arrangement of atoms at the atomic level. SiC crystals may also have macroscopic dislocations, like Si or C inclusions, micropipe, hexagonal voids, polymorphs, etc. These dislocations are typically large in size.

  • What is the process of isostatic graphite manufacturing?

    The process of isostatic graphite manufacturing is Selecting raw materials, Blending, Molding, Isostatic pressing, Carbonization, Graphitization. 

  • Introducing Physical Vapor Transport (PVT) 

    SiC's own characteristics determine its single crystal growth is more difficult. Due to the absence of Si:C=1:1 liquid phase at atmospheric pressure, the more mature growth process adopted by the mainstream of the semiconductor industry can not be used to grow the more mature growth method-straight pulling method, the descending crucible method and other methods for growth. After theoretical calculations, only when the pressure is greater than 105 atm and the temperature is higher than 3200 ℃, can we get the stoichiometric ratio of Si:C = 1:1 solution. pvt method is currently one of the more mainstream methods.

  • Key Parameters of Silicon Carbide (SiC) Substrates

    The Silicon Carbide (SiC) production process encompasses the preparation of substrate and epitaxy from the materials side, followed by chip design and manufacturing, device packaging, and finally, distribution to downstream application markets. Among these stages, substrate material processing is the most challenging aspect of the SiC industry. SiC substrates are both hard and brittle, making cutting, grinding, and polishing extremely difficult. This increases the likelihood of defects during processing and reduces the yield rate. Currently, major international SiC manufacturers are planning to transition from 6-inch to 8-inch SiC wafers. Overcoming the challenges associated with 8-inch substrates has become a critical benchmark for the SiC industry. This article will introduce the key parameters of SiC substrates.

  • Homoepitaxy and Heteroepitaxy Explained Simply

    Homoepitaxy and heteroepitaxy play pivotal roles in material science. Homoepitaxy involves the growth of a crystalline layer on a substrate of the same material, ensuring minimal defects due to perfect lattice matching. In contrast, heteroepitaxy grows a crystalline layer on a different material substrate, which can lead to challenges like lattice mismatch. These processes are crucial in advancing semiconductor devices and thin films. For instance, heteroepitaxy significantly impacts microelectronics and quantum optics, contributing to innovations like Light Emitting Diodes.

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