China diffusion process Manufacturers, Suppliers, Factory

In order to introduce the SiC coated graphite susceptor, it's important to understand its application. When manufacturing devices, further epitaxial layers are required to be built on some wafer substrates.

As a third-generation semiconductor material, Gallium Nitride is often compared with Silicon Carbide. Gallium Nitride still demonstrates its superiority with its large bandgap, high breakdown voltage, high thermal conductivity, high saturated electron drift velocity and strong radiation resistance. But it is undeniable that, like Silicon Carbide, Gallium Nitride also has various technical difficulties.

As a leading upstream graphite material manufacturer in the semiconductor industry, Semicorex prioritizes the availability, usability, and durability of its materials, setting the standard for excellence in the field.

Crystal growth is the core link in the production of Silicon Carbide substrates, and the core equipment is the crystal growth furnace. Similar to traditional crystalline silicon-grade crystal growth furnaces, the furnace structure is not very complex and mainly consists of a furnace body, a heating system, a coil transmission mechanism, a vacuum acquisition and measurement system, a gas path system, a cooling system, a control system, etc., among which Thermal field and process conditions determine the quality, size, conductive properties and other key indicators of Silicon Carbide crystals.

The wafer boats, loaded with a batch of wafers to be processed, are positioned on long cantilevered paddles.

As global acceptance of electric vehicles gradually increases, Silicon Carbide (SiC) will encounter novel growth opportunities in the forthcoming decade. It is anticipated that manufacturers of power semiconductors and operators in the automotive industry will participate more actively in the construction of this sector’s value chain.