English
Home > Products > Quartz Fin Pedestal;diffusion furnace;fused quartz;quartz boat;Quartz pedestal;diffusion process;Quartz Crystal;Quartz Evaporation Boat;clear quartz;semiconductor quartz

China Quartz Fin Pedestal;diffusion furnace;fused quartz;quartz boat;Quartz pedestal;diffusion process;Quartz Crystal;Quartz Evaporation Boat;clear quartz;semiconductor quartz Manufacturers, Suppliers, Factory

We purpose to understand high quality disfigurement with the output and supply the top service to domestic and overseas buyers wholeheartedly for Quartz Fin Pedestal;diffusion furnace;fused quartz;quartz boat;Quartz pedestal;diffusion process;Quartz Crystal;Quartz Evaporation Boat;clear quartz;semiconductor quartz, Seeing believes! We sincerely welcome the new prospects abroad to set up company interactions and also expect to consolidate the interactions with all the long-established clients.
Quartz Fin Pedestal;diffusion furnace;fused quartz;quartz boat;Quartz pedestal;diffusion process;Quartz Crystal;Quartz Evaporation Boat;clear quartz;semiconductor quartz, Our company has built stable business relationships with many well-known domestic companies as well as oversea customers. With the goal of providing high quality products to customers at low cots, we've been committed to improving its capacities in research, development, manufacturing and management. We have honored to receive recognition from our customers. Till now we have now passed ISO9001 in 2005 and ISO/TS16949 in 2008. Enterprises of "quality of survival, the credibility of development" for the purpose, sincerely welcome domestic and foreign businessmen to visit to discuss cooperation.

Related Products

Hot Products

  • Epitaxial Susceptor

    Epitaxial Susceptor

    Semicorex Epitaxial Susceptor with SiC coating is designed to support and hold SiC wafers during the epitaxial growth process, ensuring precision and uniformity in semiconductor manufacturing. Choose Semicorex for its high-quality, durable, and customizable products that meet the rigorous demands of advanced semiconductor applications.*
  • Susceptor Disc

    Susceptor Disc

    The Semicorex Susceptor Disc is an indispensable tool in Metal-Organic Chemical Vapor Deposition (MOCVD), specifically engineered for supporting and heating semiconductor wafers during the critical process of epitaxial layer deposition. The Susceptor Disc is instrumental in the manufacturing of semiconductor devices, where precise layer growth is paramount. Semicorex’s commitment to market-leading quality, allied with competitive fiscal considerations, cements our eagerness to establish partnerships in fulfilling your semiconductor wafer conveyance requisites.
  • Graphite Thermal Field

    Graphite Thermal Field

    Semicorex Graphite Thermal Field combines cutting-edge material science with a deep understanding of crystal growth processes, it delivers innovative a solution that empowers the semiconductor industry to achieve new levels of performance, efficiency, and cost-effectiveness.**
  • Semiconductor Wafer Boat

    Semiconductor Wafer Boat

    Semicorex provides wafer boats, pedestals, and custom wafer carriers for both vertical / column and horizontal configurations. We have been manufacturer and supplier of silicon carbide coating film for many years. Our Semiconductor Wafer Boat has a good price advantage and cover most of the European and American markets. We look forward to becoming your long-term partner in China.
  • Metallic Shower Head

    Metallic Shower Head

    The Metallic Shower head, known as a gas distribution plate or gas shower head, is a critical component extensively utilized in semiconductor manufacturing processes.Its primary function is to evenly distribute gases into a reaction chamber, ensuring that semiconductor materials come into uniform contact with process gases.**
  • Graphite Heater For Hot Zone

    Graphite Heater For Hot Zone

    Semicorex Graphite Heater For Hot Zone, designed to operate reliably within high-temperature furnaces, are engineered to withstand the challenging conditions inherent to processes like chemical vapor deposition (CVD), epitaxy, and high-temperature annealing. We at Semicorex are dedicated to manufacturing and supplying high-performance Graphite Heater For Hot Zone that fuses quality with cost-efficiency.**
  • Related Blog
  • Reviews

  • Synthesizing High-Purity Silicon Carbide Powder

    High-Purity Silicon Carbide Powder features exceptional wide bandgap characteristics, which make it an ideal material for manufacturing high-frequency, high-power electronic devices.

  • What is CVD process in semiconductor?

    Chemical vapor deposition CVD refers to the introduction of two or more gaseous raw materials into a reaction chamber under vacuum and high temperature conditions, where the gaseous raw materials react with each other to form a new material, which is deposited on the wafer surface.

  • Silicon Carbide Substrate Core Process Flow

    Silicon carbide substrate is a compound semiconductor single crystal material composed of two elements, carbon and silicon. It has the characteristics of large bandgap, high thermal conductivity, high critical breakdown field strength, and high electron saturation drift rate.

  • Thermal field insulation material

    The process of monocrystalline silicon growth predominantly occurs within a thermal field, where the quality of the thermal environment significantly impacts crystal quality and growth efficiency. The design of the thermal field plays a pivotal role in shaping temperature gradients and gas flow dynamics within the furnace chamber. Furthermore, the materials used in constructing the thermal field directly influence its lifespan and performance.

  • The Critical Role of SiC Substrates and Crystal Growth in the Semiconductor Industry

    Within the silicon carbide (SiC) industry chain, substrate suppliers hold significant leverage, primarily due to value distribution. SiC substrates account for 47% of the total value, followed by epitaxial layers at 23%, while device design and manufacturing constitute the remaining 30%. This inverted value chain stems from the high technological barriers inherent to substrate and epitaxial layer production. Three major challenges plague SiC substrate growth: stringent growth conditions, slow growth rates, and demanding crystallographic requirements. These complexities contribute to increased processing difficulty, ultimately resulting in low product yields and high costs. Furthermore, the epitaxial layer’s thickness and doping concentration are critical parameters directly impacting the final device performance.

  • What Is Silicon Carbide (SiC)?

    Semiconductor materials can be divided into three generations according to the time sequence. The first generation of germanium, silicon and other common monomaterials, which is characterised by convenient switching, generally used in integrated circuits. The second generation of gallium arsenide, indium phosphide and other compound semiconductors, mainly used for light-emitting and communication materials.

Send Inquiry

Hit enter to search or ESC to close
X
We use cookies to offer you a better browsing experience, analyze site traffic and personalize content. By using this site, you agree to our use of cookies. Privacy Policy
Reject Accept