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To be the stage of realizing dreams of our employees! To build a happier, far more united and far more specialist team! To reach a mutual profit of our customers, suppliers, the society and ourselves for crystal growth fuenace,graphite felt,carbon fiber felt,soft felt,carbon felt insulation, We will keep working hard and as we try our best to supply the best quality products, most competitive price and excellent service to every customer. Your satisfaction, our glory!!!
crystal growth fuenace, So that you can utilize the resource from the expanding info in international trade, we welcome shoppers from everywhere on-line and offline. In spite of the good quality solutions we present, effective and satisfying consultation service is supplied by our specialist after-sale service team. Product lists and comprehensive parameters and any other info weil be sent for you timely for your inquiries. So make sure you make contact with us by sending us emails or call us if you have any questions about our corporation. ou may also get our address info from our web page and come to our company to get a field survey of our merchandise. We have been confident that we are intending to share mutual achievement and create strong co-operation relations with our companions in this marketplace. We're searching forward for your inquiries.

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    You can rest assured to buy Aluminum Nitride Wafer Holder from our factory. Semicorex Aluminum Nitride (AlN) Wafer Holder stands as an indispensable component within the realm of semiconductor processing, serving as a pivotal platform for securely holding delicate wafers throughout various stages of fabrication. Crafted from high-quality aluminum nitride material, renowned for its exceptional thermal conductivity, mechanical strength, and electrical insulation properties, this wafer holder ensures optimal conditions for precise and efficient semiconductor manufacturing processes. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • Wafer Carriers

    Wafer Carriers

    Semicorex Wafer carriers, also known as wafer cassettes, play a critical role in maintaining these standards. These specialized containers are designed to safely store and transport silicon wafers, which are the foundational material for semiconductor devices. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China*.
  • SiC Ceramic Wafer Boat

    SiC Ceramic Wafer Boat

    Semicorex SiC Ceramic Wafer Boat has emerged as a critical enabling technology, providing an unwavering platform for high-temperature processing while safeguarding wafer integrity and ensuring the purity required for high-performance devices. It’s tailored to the semiconductor and photovoltaic industries that are built on precision. Every aspect of wafer processing, from deposition to diffusion, demands meticulous control and pristine environments. We at Semicorex are dedicated to manufacturing and supplying high-performance SiC Ceramic Wafer Boat that fuses quality with cost-efficiency.**
  • SiC Gasket

    SiC Gasket

    Semicorex prioritizes quality and performance, ensuring that each SiC Gasket meets stringent industry standards. Our cutting-edge manufacturing processes guarantee that our products deliver consistent and reliable results, positioning Semicorex as a leader in the field of advanced ceramics.
  • SiC Multi Pocket Susceptor

    SiC Multi Pocket Susceptor

    Semicorex SiC Multi Pocket Susceptor represents a critical enabling technology in the epitaxial growth of high-quality semiconductor wafers. Fabricated through a sophisticated Chemical Vapor Deposition (CVD) process, these susceptors provide a robust and high-performance platform for achieving exceptional epitaxial layer uniformity and process efficiency.**
  • Ultra-Thin Graphite with High Porosity

    Ultra-Thin Graphite with High Porosity

    Semicorex Ultra-Thin Graphite with High Porosity is primarily utilized in the semiconductor industry, particularly in the single crystal growth process featuring excellent surface adhesion, superior heat resistance, high porosity and ultra-thin thickness with outstanding machinability. We at Semicorex are dedicated to manufacturing and supplying high-performance Ultra-Thin Graphite with High Porosity that fuse quality with cost-efficiency. **
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  • Difficulties in GaN preparation

    As a third-generation semiconductor material, Gallium Nitride is often compared with Silicon Carbide. Gallium Nitride still demonstrates its superiority with its large bandgap, high breakdown voltage, high thermal conductivity, high saturated electron drift velocity and strong radiation resistance. But it is undeniable that, like Silicon Carbide, Gallium Nitride also has various technical difficulties.

  • TaC Coating

    According to the research results, TaC coating can act as a protection and isolation layer to extend graphite component life, improve radial temperature uniformity, maintain SiC sublimation stoichiometry, suppress impurity migration, and reduce energy consumption. Ultimately a TaC-coated graphite crucible set is expected to improve SiC PVT process control and product quality.

  • What is Silicon Nitride

    Silicon nitride (Si3N4) is a key material in the development of advanced high-temperature structural ceramics.

  • Methods of AlN Crystal Growth

    AlN, as third-generation semiconductor material, is not only an important blue light and ultraviolet light material, but also an important packaging, dielectric isolation and insulation material for electronic devices and integrated circuits, especially suitable for high-temperature and high-power devices. In addition, AlN and GaN have a good thermal match and chemical compatibility, AlN used as GaN epitaxial substrate, can significantly reduce the defect density in GaN devices, improve device performance.

  • SiGe and Si Selective Etching Technology

    A critical step in the fabrication of n-type GAAFETs involves the high-selectivity etching of SiGe:Si stacks prior to the deposition of inner spacers, generating silicon nanosheets and releasing channels.

  • Silicon Carbide(SiC) Crystal Growth Furnace

    Crystal growth is the core link in the production of Silicon Carbide substrates, and the core equipment is the crystal growth furnace. Similar to traditional crystalline silicon-grade crystal growth furnaces, the furnace structure is not very complex and mainly consists of a furnace body, a heating system, a coil transmission mechanism, a vacuum acquisition and measurement system, a gas path system, a cooling system, a control system, etc., among which Thermal field and process conditions determine the quality, size, conductive properties and other key indicators of Silicon Carbide crystals.

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