English
Home > Products
  • Ceramic Tube Price

    • China Ceramic Tube Price Manufacturers, Suppliers, Factory

    Semicorex has been producing Ceramic Tube Price for many years and is one of the professional Ceramic Tube Price manufacturers and Suppliers in China. Once you buy our advanced and durable products which supply bulk packing, we guarantee the large quantity in quick delivery. Over the years, we have provided customers with customized service. Customers are satisfied with our products and excellent service. We sincerely look forward to becoming your reliable long-term business partner! Welcome to buy products from our factory.

    Related Products

    Hot Products

    • SiC ICP Etching Disk

      SiC ICP Etching Disk

      Semicorex SiC ICP Etching Disk is not merely components; it's essential enabler of cutting-edge semiconductor manufacturing as the semiconductor industry continues its relentless pursuit of miniaturization and performance, the demand for advanced materials like SiC will only intensify. It ensures the precision, reliability, and performance required to power our technology-driven world.We at Semicorex are dedicated to manufacturing and supplying high-performance SiC ICP Etching Disk that fuses quality with cost-efficiency.**
    • ICP Plasma Etching System

      ICP Plasma Etching System

      Semicorex's SiC Coated carrier for ICP Plasma Etching System is a reliable and cost-effective solution for high-temperature wafer handling processes such as epitaxy and MOCVD. Our carriers feature a fine SiC crystal coating that provides superior heat resistance, even thermal uniformity, and durable chemical resistance.
    • TaC Coating Guide Rings

      TaC Coating Guide Rings

      TaC Coating Guide Rings are graphite ring with a tantalum carbide coating, designed for use in silicon carbide crystal growth furnaces to enhance crystal quality. Choose Semicorex for its advanced coating technology, ensuring superior durability, thermal stability, and optimized crystal growth performance.*
    • SiC Cantilever Paddle

      SiC Cantilever Paddle

      Semicorex SiC (Silicon Carbide) Cantilever Paddle is a crucial component used in semiconductor manufacturing processes, particularly in diffusion or LPCVD (Low-Pressure Chemical Vapor Deposition) furnaces during processes like diffusion and RTP (Rapid Thermal Processing). The SiC Cantilever Paddle is to carry semiconductor wafers securely within the process tube during various high-temperature processes such as diffusion and RTP. It serves the purpose of supporting and transporting wafers within the process tube of these furnaces. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
    • SiC Coated Plate Carriers for MOCVD

      SiC Coated Plate Carriers for MOCVD

      Semicorex SiC Coated Plate Carriers for MOCVD is a high-quality carrier designed for use in the semiconductor manufacturing process. Its high purity, excellent corrosion resistance, and even thermal profile make it an excellent choice for those looking for a carrier that can withstand the demands of the semiconductor manufacturing process.
    • GaN-on-SiC Substrate

      GaN-on-SiC Substrate

      Semicorex graphite susceptor engineered specifically for epitaxy equipment with high heat and corrosion resistance in China. Our GaN-on-SiC Substrate susceptors have a good price advantage and cover many of the European and American markets. We look forward to becoming your long-term partner in China.
    • Related Blog
    • Reviews

    • What is Crystal Growth Furnace System

      The single crystal growth furnace is composed of six key systems that work in harmony to ensure efficient and high-quality crystal growth.

    • CVD process for SiC wafer epitaxy

      The CVD process for SiC wafer epitaxy involves the deposition of SiC films onto a SiC substrate using a gas-phase reaction. The SiC precursor gases, typically methyltrichlorosilane (MTS) and ethylene (C2H4), are introduced into a reaction chamber where the SiC substrate is heated to a high temperature (usually between 1400 and 1600 degrees Celsius) under a controlled atmosphere of hydrogen (H2).

    • Introduction to Silicon Carbide Power Devices

      Silicon carbide (SiC) power devices are semiconductor devices made of silicon carbide materials, mainly used in high-frequency, high-temperature, high-voltage and high-power electronic applications. Compared with traditional silicon (Si)-based power devices, silicon carbide power devices have higher bandgap width, higher critical breakdown electric field, higher thermal conductivity and higher saturated electron drift velocity, which makes them have great development potential and application value in the field of power electronics.

    • How Are Ceramic Electrostatic Chucks Actually Produced?

      In semiconductor manufacturing, the precision and stability of the etching process are paramount. One critical factor in achieving high-quality etching is ensuring that wafers are perfectly flat on the tray during the process. Any deviation can lead to uneven ion bombardment, causing undesirable angles and variations in etching rates. To address these challenges, engineers have developed Electrostatic Chucks (ESCs), which have significantly improved etching quality and stability. This article delves into the design and functionality of ESCs, focusing on one key aspect: the electrostatic principles behind wafer adhesion.

    • Released 850V High Power GaN HEMT Epitaxial Products

      In November 2023, Semicorex released 850V GaN-on-Si epitaxial products for high-voltage, high-current HEMT power device applications. Compared to other substrates for HMET power devices, GaN-on-Si enables larger wafer sizes and more diversified applications, and it can also be quickly introduced into the mainstream silicon chip process in fabs, which is a unique advantage for improving the yield of power devices.

    • The Crucial Role of Epitaxial Layers in Semiconductor Devices

      Epitaxial growth refers to the process of growing a crystallographically well-ordered monocrystalline layer on a substrate. Generally speaking, epitaxial growth involves the cultivation of a crystal layer on a single-crystal substrate, with the grown layer sharing the same crystallographic orientation as the original substrate. Epitaxy is extensively utilized in semiconductor manufacturing, such as the production of epitaxial silicon wafers in the integrated circuit industry.

    Send Inquiry

    Hit enter to search or ESC to close
    X
    We use cookies to offer you a better browsing experience, analyze site traffic and personalize content. By using this site, you agree to our use of cookies. Privacy Policy
    Reject Accept