30mm Aluminum Nitride Wafer Substrate

The unique attributes of Semicorex 30mm Aluminum Nitride Wafer Substrate make it an ideal substrate for ultraviolet (UV) LEDs, UV detectors, UV lasers, and the next generation of 5G high-power/high-frequency RF devices. In wireless communications, 30mm Aluminum Nitride Wafer Substrate’s properties facilitate the development of devices capable of handling the high power and frequencies essential for 5G technologies, enhancing signal transmission and reception. Furthermore, in fields like healthcare and military, AlN-based devices are employed in medical phototherapy for treating skin conditions, drug discovery through photodynamic therapies, and secure communication technologies in aerospace, underscoring 30mm Aluminum Nitride Wafer Substrate’s versatility and critical role in technological advancements across diverse sectors.

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Product Description

Semicorex 30mm Aluminum Nitride Wafer Substrate substrates boast remarkable properties essential for advanced semiconductor applications. Their wide bandgap enables devices to operate at high voltages and temperatures while minimizing electrical leakage, crucial for power electronics. 30mm Aluminum Nitride Wafer Substrate’s high thermal conductivity is pivotal in managing the heat generated in high-power devices, effectively enhancing device reliability and performance. Furthermore, the high breakdown field of 30mm Aluminum Nitride Wafer Substrate allows for devices that can withstand high electric fields without breakdown, ideal for applications requiring high power density and efficiency.

30mm Aluminum Nitride Wafer Substrate substrates exhibit high electron mobility, which translates to faster electronic devices with better frequency response. This characteristic is particularly beneficial in the fabrication of radio frequency (RF) devices and high-speed electronics, where rapid signal transmission and processing are required. Additionally, the corrosion and radiation resistance of 30mm Aluminum Nitride Wafer Substrate makes it an exceptional choice for harsh environments, such as space applications, where materials are exposed to corrosive gases and high levels of radiation. This resilience ensures long-term reliability and functionality of devices under extreme conditions, making 30mm Aluminum Nitride Wafer Substrate an optimal substrate for optoelectronic devices and high-power/high-frequency electronic components.

We currently offer our clients standardized high-quality aluminum nitride single crystal substrate products with dimensions of 10x10mm, Φ10mm, Φ15mm, Φ20mm, Φ25.4mm, Φ30mm, and Φ50.8mm. In addition, we also supply non-polar M-face aluminum nitride single crystal substrates in the 10-20mm range. For bespoke needs, we can customize aluminum nitride single crystal substrate polishing slices ranging from 5mm to 50.8mm. This wide array of offerings caters to a plethora of clients’ needs and enables the exploration of diverse technological frontiers.