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  • Carrier Plate for PSS Etching

    • China Carrier Plate for PSS Etching Manufacturers, Suppliers, Factory

    Semicorex has been producing Carrier Plate for PSS Etching for many years and is one of the professional Carrier Plate for PSS Etching manufacturers and Suppliers in China. Once you buy our advanced and durable products which supply bulk packing, we guarantee the large quantity in quick delivery. Over the years, we have provided customers with customized service. Customers are satisfied with our products and excellent service. We sincerely look forward to becoming your reliable long-term business partner! Welcome to buy products from our factory.

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    • Susceptor with Grid

      Susceptor with Grid

      Semicorex Susceptor with Grid is a specialized component used in the epitaxial growth process of semiconductor wafers. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
    • Tantalum Carbide Part

      Tantalum Carbide Part

      Semicorex Tantalum Carbide Part is a TaC-coated graphite component designed for high-performance use in silicon carbide (SiC) crystal growth applications, offering excellent temperature and chemical resistance. Choose Semicorex for reliable, high-quality components that enhance crystal quality and production efficiency in semiconductor manufacturing.*
    • Silicon Carbide Cantilever Paddle

      Silicon Carbide Cantilever Paddle

      Semicorex silicon carbide cantilever paddle is a specialized component used in furnaces for various thermal processing applications. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
    • Graphite Soft Felt

      Graphite Soft Felt

      Semicorex Graphite Soft Felt is a high-performance insulation material designed to maintain optimal temperature conditions in semiconductor crystal growth processes. Semicorex offers advanced solutions with superior thermal management, ensuring high-quality materials and reliable performance in critical semiconductor manufacturing applications.*
    • SiC Coated Support Ring

      SiC Coated Support Ring

      Semicorex SiC Coated Support Ring is an essential component used in the semiconductor epitaxial growth process. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
    • Tantalum Carbide Ring

      Tantalum Carbide Ring

      Semicorex Tantalum Carbide Ring is a graphite ring coated with tantalum carbide, used as a guide ring in silicon carbide crystal growth furnaces to ensure precise temperature and gas flow control. Choose Semicorex for its advanced coating technology and high-quality materials, delivering durable and reliable components that enhance crystal growth efficiency and product lifespan.*
    • Related Blog
    • Reviews

    • Knowing GaN

      Recently, the semiconductor industry has continued to pay increasing attention to Gallium Nitride (GaN) technology. Due to its excellent electronic properties, Gallium Nitride devices have important applications in many high-tech fields:

    • Funds on Semiconductor projects

      Every country is aware of the importance of chips and is now accelerating the construction of its own chip manufacturing supply chain ecosystem to prevent another chip shortage problem. But the advanced foundries without next-gen chip designers would be the same as “Fabs without Chips”.

    • What is graphitising？

      Graphitising is the process of transforming non-graphitic charcoal into graphitic charcoal with graphite three-dimensional regular ordered structure by high-temperature heat treatment, making full use of electrical resistance heat to heat the charcoal material to 2300~3000 ℃, and transforming the charcoal with amorphous chaotic layer structure into ordered graphite crystalline structure.

    • MOCVD is the key equipment

    • Introducing Physical Vapor Transport (PVT) 

      SiC's own characteristics determine its single crystal growth is more difficult. Due to the absence of Si:C=1:1 liquid phase at atmospheric pressure, the more mature growth process adopted by the mainstream of the semiconductor industry can not be used to grow the more mature growth method-straight pulling method, the descending crucible method and other methods for growth. After theoretical calculations, only when the pressure is greater than 105 atm and the temperature is higher than 3200 ℃, can we get the stoichiometric ratio of Si:C = 1:1 solution. pvt method is currently one of the more mainstream methods.

    • 4th Generation Semiconductors Gallium Oxide/β-Ga2O3

      The first generation of semiconductor materials is mainly represented by silicon (Si) and germanium (Ge), which began to rise in the 1950s. Germanium was dominant in the early days and was mainly used in low-voltage, low-frequency, medium-power transistors and photodetectors, but due to its poor high temperature resistance and radiation resistance, it was gradually replaced by silicon devices in the late 1960s. Silicon is still the main semiconductor material in the field of microelectronics due to its high technological maturity and cost advantages.

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