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  • PSS Fabricated by Dry Etching

    • China PSS Fabricated by Dry Etching Manufacturers, Suppliers, Factory

    Semicorex has been producing PSS Fabricated by Dry Etching for many years and is one of the professional PSS Fabricated by Dry Etching manufacturers and Suppliers in China. Once you buy our advanced and durable products which supply bulk packing, we guarantee the large quantity in quick delivery. Over the years, we have provided customers with customized service. Customers are satisfied with our products and excellent service. We sincerely look forward to becoming your reliable long-term business partner! Welcome to buy products from our factory.

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    • Pancake Susceptor for Wafer Epitaxial Process

      Pancake Susceptor for Wafer Epitaxial Process

      Semicorex pancake susceptor for wafer epitaxial process is a high purity graphite base by CVD SiC coated. Our pancake susceptor for wafer epitaxial process has a good price advantage and cover most of the European and American markets. We look forward to becoming your long-term partner in China.
    • Silicon Carbide Epitaxy Susceptor

      Silicon Carbide Epitaxy Susceptor

      Semicorex is a large-scale manufacturer and supplier of Silicon Carbide Epitaxy Susceptor in China. We focus on semiconductor industries such as silicon carbide layers and epitaxy semiconductor. Our products have a good price advantage and cover many of the European and American markets. We look forward to becoming your long-term partner.
    • Wafer Carrier Tray

      Wafer Carrier Tray

      Semicorex provides semiconductor-grade ceramics for your OEM semi fabrication tools and wafer handling components focusing on silicon carbide layers in semiconductor industries. We have been manufacturer and supplier of Wafer Carrier Tray for many years. Our Wafer Carrier Tray has a good price advantage and cover most of the European and American markets. We look forward to becoming your long-term partner in China.
    • MOCVD Wafer Carriers for Semiconductor Industry

      MOCVD Wafer Carriers for Semiconductor Industry

      Semicorex MOCVD Wafer Carriers for Semiconductor Industry is a top-of-the-line carrier designed for use in the semiconductor industry. Its high-purity material ensures even thermal profile and laminar gas flow pattern, delivering high-quality wafers.
    • Silicon Carbide Wafer Boat

      Silicon Carbide Wafer Boat

      Semicorex engineers semiconductor-grade ceramics for your OEM semi fabrication tools and wafer handling components. Our Silicon Carbide Wafer Boat has a good price advantage and cover many of the European and American markets. We look forward to becoming your long-term partner in China.
    • 4 Inch High Purity Semi-Insulating HPSI SiC Double-side Polished Wafer Substrate

      4 Inch High Purity Semi-Insulating HPSI SiC Double-side Polished Wafer Substrate

      Semicorex provides various types of 4H and 6H SiC wafers. We have been manufacturer and supplier of wafer substrates for many years. Our 4 Inch High Purity Semi-Insulating HPSI SiC Double-side Polished Wafer Substrate has a good price advantage and cover most of the European and American markets. We look forward to becoming your long-term partner in China.
    • Related Blog
    • Reviews

    • What is Crystal Growth Furnace System

      The single crystal growth furnace is composed of six key systems that work in harmony to ensure efficient and high-quality crystal growth.

    • Doping Control in Sublimation SiC Growth

      Silicon carbide (SiC) plays an important role in manufacturing power electronics and high-frequency devices due to its excellent electrical and thermal properties. The quality and doping level of SiC crystals directly affect the performance of the device, so precise control of doping is one of the key technologies in the SiC growth process.

    • Silicon Carbide(SiC) Crystal Growth Furnace

      Crystal growth is the core link in the production of Silicon Carbide substrates, and the core equipment is the crystal growth furnace. Similar to traditional crystalline silicon-grade crystal growth furnaces, the furnace structure is not very complex and mainly consists of a furnace body, a heating system, a coil transmission mechanism, a vacuum acquisition and measurement system, a gas path system, a cooling system, a control system, etc., among which Thermal field and process conditions determine the quality, size, conductive properties and other key indicators of Silicon Carbide crystals.

    • Introduction to Silicon Carbide Power Devices

      Silicon carbide (SiC) power devices are semiconductor devices made of silicon carbide materials, mainly used in high-frequency, high-temperature, high-voltage and high-power electronic applications. Compared with traditional silicon (Si)-based power devices, silicon carbide power devices have higher bandgap width, higher critical breakdown electric field, higher thermal conductivity and higher saturated electron drift velocity, which makes them have great development potential and application value in the field of power electronics.

    • MOCVD is the key equipment

    • What are the challenges of silicon carbide substrate production?

      Silicon carbide (SiC) is a material that possesses high bond energy, similar to other hard materials like diamond and cubic boron nitride. However, the high bond energy of SiC makes it difficult to crystallize directly into ingots via traditional melting methods. Therefore, the process of growing silicon carbide crystals involves the use of vapor phase epitaxy technology.

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