China aln al2o3 Manufacturers, Suppliers, Factory

Silicon carbide (SiC) is a material that possesses exceptional thermal, physical and chemical stability, exhibiting properties that go beyond those of conventional materials. Its thermal conductivity is an astonishing 84W/(m·K), which is not only higher than copper but also three times that of silicon. This demonstrates its enormous potential for use in thermal management applications.

Tantalum carbide coating is an important high-strength, corrosion-resistant and chemically stable high-temperature structural material with a melting point of up to 4273 °C, one of the several compounds with the highest temperature resistance. It has excellent high-temperature mechanical properties, resistance to high-speed airflow scouring, ablation resistance, and good chemical and mechanical compatibility with graphite and carbon/carbon composites. Therefore, in the epitaxial process of GaN LEDs and SiC power devices such as MOCVD, TaC coating has excellent acid and alkali resistance to H2, HCl, NH3, which can completely protect the graphite substrate material and purify the growth environment.

The ultra-high synthesis temperature and the difficulty of achieving dense sintering of SiC ceramics have limited their development. The sintering process is crucial for SiC ceramics.

Silicon Carbide (SiC) epitaxy is a key technology in the field of semiconductors, particularly for the development of high-power electronic devices. SiC is a compound semiconductor with a wide bandgap, which makes it ideal for applications that require a high-temperature and high-voltage operation.

When cleaning wafers, ultrasonic cleaning and megasonic cleaning are commonly used to remove particles from the wafer surface.

The history of silicon carbide (SiC) dates back to 1891, when Edward Goodrich Acheson accidentally discovered it while attempting to synthesize artificial diamonds. Acheson heated a mixture of clay (aluminosilicate) and powdered coke (carbon) in an electric furnace. Instead of the expected diamonds, he obtained a bright green crystal adhering to the carbon. This crystal had a hardness second only to diamond, and was thus named carborundum. In 1904, French-Jewish chemist Henri Moissan discovered rare natural silicon carbide minerals while studying meteorite samples from the Diablo Canyon in Arizona, USA. He named these minerals moissanite, and his discovery earned him the 1906 Nobel Prize in Chemistry.