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To be able to ideal meet up with client's needs, all of our operations are strictly performed in line with our motto ""High High-quality, Competitive Cost, Fast Service"" for 3C-SiC,cvd sic coating,lpe sic epitaxy,asm epitaxy,epitaxy mocvd, Our enterprise is dedicated to providing prospects with superior and stable top quality items at competitive selling price, producing each and every customer content with our services and products.
3C-SiC, Our Company has specialist engineers and technical staff to answer your questions about maintenance problems, some common failure. Our product quality assurance, price concessions, any questions about the products, You should feel free to contact us.

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    Semicorex provides semiconductor-grade ceramics for your OEM semi fabrication tools and wafer handling components focusing on silicon carbide layers in semiconductor industries. We have been manufacturer and supplier of Ceramic Wafer Carrier for many years. Our products have a good price advantage and cover most of the European and American markets. We look forward to becoming your long-term partner in China.
  • TaC Coating Planetary Plate

    TaC Coating Planetary Plate

    Semicorex TaC Coating Planetary Plate is a high-performance component designed specifically for MOCVD systems. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • Silicon Carbide Chuck

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    Semicorex Silicon Carbide Chuck is a highly specialized component used in semiconductor manufacturing. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China*.
  • SiC Coating Flat Part

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    Semicorex SiC Coating Flat Part is a SiC-coated graphite component essential for uniform airflow conduction in the SiC epitaxy process. Semicorex delivers precision-engineered solutions with unmatched quality, ensuring optimal performance for semiconductor manufacturing.*
  • Graphite Top Plates

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  • Tantalum carbide coatings in semiconductor industry

    The development of high-powered blue and UV LEDs has enabled the creation of full-color LED TV displays, as well as white LED automotive and domestic lighting. These LEDs are based on Gallium Nitride, which is deposited on substrate wafers supported by CVD SiC-coated graphite susceptor using the MOCVD process.

  • Thermal field insulation material

    The process of monocrystalline silicon growth predominantly occurs within a thermal field, where the quality of the thermal environment significantly impacts crystal quality and growth efficiency. The design of the thermal field plays a pivotal role in shaping temperature gradients and gas flow dynamics within the furnace chamber. Furthermore, the materials used in constructing the thermal field directly influence its lifespan and performance.

  • GaN and SiC: Coexistence or Substitution?

    The push for higher power density and efficiency has become a primary driver of innovation across multiple industries, including data centers, renewable energy, consumer electronics, electric vehicles, and autonomous driving technologies. In the realm of wide bandgap (WBG) materials, Gallium Nitride (GaN) and Silicon Carbide (SiC) are currently the two core platforms, viewed as pivotal tools leading power semiconductor innovation. These materials are profoundly transforming the power electronics industry to address the ever-increasing demand for power.

  • Exploring the Future Prospects of Silicon Semiconductor Chips

  • SK Siltron Expands Its SiC Wafer Production with a $544 Million Loan from the U.S. Department of Energy

    The U.S. Department of Energy (DOE) recently confirmed a $544 million loan to SK Siltron, a semiconductor wafer manufacturer under SK Group.

  • What are the technical difficulties of SiC crystal growth furnace

    The crystal growth furnace is the core equipment for the growth of Silicon Carbide crystals. It is similar to the traditional crystalline silicon-grade crystal growth furnace. The furnace structure is not very complicated. It is mainly composed of the furnace body, heating system, coil transmission mechanism, vacuum acquisition and measurement system, gas path system, cooling system, control system, etc. The thermal field and process conditions determine the key indicators such as the quality, size, and conductivity of the SiC crystal.

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