English
Home > Products > 2 Silicon Carbide Processing Trays

China 2 Silicon Carbide Processing Trays Manufacturers, Suppliers, Factory

We believe in: Innovation is our soul and spirit. Quality is our life. Shopper need is our God for 2 Silicon Carbide Processing Trays,Epitaxial Tray,MOCVD Middle Heater,Carbide Coated Epitaxial Growth Susceptor,SiC Coating Coated Graphite Substrate for Semiconductor, our products have good reputation from the world as its most competive price and our most advantage of after-sale service to the clients。
2 Silicon Carbide Processing Trays, Immediate and expert after-sale service supplied by our consultant group has happy our buyers. In depth Info and parameters from the merchandise will probably be sent for you for any comprehensive acknowledge. Free samples may be delivered and company check out to our corporation. n Morocco for negotiation is constantly welcome. Hope to get inquiries type you and construct a long-term co-operation partnership.

Related Products

Hot Products

  • Etching Ring

    Etching Ring

    The Etching Ring made of CVD SiC is an essential component in the semiconductor manufacturing process, offering exceptional performance in plasma etching environments. With its superior hardness, chemical resistance, thermal stability, and high purity, CVD SiC ensures that the etching process is precise, efficient, and reliable. By choosing Semicorex CVD SiC Etching Rings, semiconductor manufacturers can enhance the longevity of their equipment, reduce downtime, and improve the overall quality of their products.*
  • CVD SiC Ring

    CVD SiC Ring

    Semicorex CVD SiC Ring stands as an essential component within the intricate landscape of semiconductor manufacturing, specifically designed to play a crucial role in the etching process. Crafted with precision and innovation, this ring is exclusively fashioned from Chemical Vapor Deposition Silicon Carbide (CVD SiC), exemplifying a material known for its exceptional properties in the demanding semiconductor industry. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • Wafer Boat Carrier

    Wafer Boat Carrier

    Semicorex Wafer Boat Carrier stands as a pinnacle of innovation in the realm of semiconductor processing. Crafted meticulously from graphite and fortified with a cutting-edge coating of Chemical Vapor Deposition (CVD) Silicon Carbide (SiC), this carrier exemplifies precision engineering and advanced materials science. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • Mechanical Seal Ring

    Mechanical Seal Ring

    Semicorex provide high-quality Mechanical Seal Ring customized service. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • Quartz Thermos Bucket

    Quartz Thermos Bucket

    Semicorex Quartz Thermos Bucket is an essential tool designed for effective insulation in the semiconductor industry. This innovative product is engineered to maintain the temperature of critical materials and solutions, ensuring optimal performance during manufacturing processes. With its unique construction and advanced materials, the Quartz Thermos Bucket is an indispensable asset for companies aiming to enhance their operational efficiency and product quality.*
  • SiC Coated Wafer Heater

    SiC Coated Wafer Heater

    Semicorex is a leading independently owned manufacturer of Silicon Carbide Coated Graphite, Precision Machined High Purity Graphite focusing on the Silicon Carbide Coated Graphite, Silicon Carbide Ceramic, MOCVP areas of semiconductor manufacturing. Our SiC Coated Wafer Heater has a good price advantage and cover many of the European and American markets. We look forward to becoming your long-term partner in China.
  • Related Blog
  • Reviews

  • Plasma Processes in CVD Operations

    Chemical Vapor Deposition (CVD) refers to a process technology where multiple gaseous reactants at varied partial pressures undergo a chemical reaction under specific temperature and pressure conditions. The resulting solid substance deposits on the surface of the substrate material, thereby obtaining the desired thin film. In traditional integrated circuit manufacturing processes, the obtained thin film materials are generally compounds such as oxides, nitrides, carbides, or materials like polycrystalline silicon, amorphous silicon, etc.

  • Substrate vs. Epitaxy: Key Roles in Semiconductor Manufacturing

    ​In the realms of semiconductor technology and microelectronics, the concepts of substrates and epitaxy hold significant importance. They play critical roles in the manufacturing process of semiconductor devices. This article will delve into the differences between semiconductor substrates and epitaxy, covering their definitions, functions, material structures, and application areas.

  • Method of GaN Crystal Growth

    When producing large-sized GaN single crystal substrates, HVPE is currently the best choice for commercialization. However, the back carrier concentration of the grown GaN cannot be precisely controlled.

  • Differences between SiC crystals with different structures

    Silicon carbide (SiC) is a material that possesses exceptional thermal, physical and chemical stability, exhibiting properties that go beyond those of conventional materials. Its thermal conductivity is an astonishing 84W/(m·K), which is not only higher than copper but also three times that of silicon. This demonstrates its enormous potential for use in thermal management applications.

  • SiC Epitaxy

    There are two types of epitaxy: homogeneous and heterogeneous. In order to produce SiC devices with specific resistance and other parameters for different applications, the substrate must meet the conditions of epitaxy before production can begin. The quality of the epitaxy affects the device's performance.

  • Technical Challenges in Silicon Carbide Crystal Growth Furnaces

    Silicon carbide (SiC) crystal growth furnaces are the cornerstone of SiC wafer production. While sharing similarities with traditional silicon crystal growth furnaces, SiC furnaces face unique challenges due to the material’s extreme growth conditions and complex defect formation mechanisms. These challenges can be broadly categorized into two areas: crystal growth and epitaxial growth.

Send Inquiry

Hit enter to search or ESC to close
X
We use cookies to offer you a better browsing experience, analyze site traffic and personalize content. By using this site, you agree to our use of cookies. Privacy Policy
Reject Accept