English
Home > Products
  • SiC Coating Coated Graphite Substrate for Semiconductor

    • China SiC Coating Coated Graphite Substrate for Semiconductor Manufacturers, Suppliers, Factory

    Semicorex has been producing SiC Coating Coated Graphite Substrate for Semiconductor for many years and is one of the professional SiC Coating Coated Graphite Substrate for Semiconductor manufacturers and Suppliers in China. Once you buy our advanced and durable products which supply bulk packing, we guarantee the large quantity in quick delivery. Over the years, we have provided customers with customized service. Customers are satisfied with our products and excellent service. We sincerely look forward to becoming your reliable long-term business partner! Welcome to buy products from our factory.

    Related Products

    Hot Products

    • Plate for Epitaxial Growth

      Plate for Epitaxial Growth

      The Semicorex Plate for Epitaxial Growth stands as a critical element specifically designed to cater to the intricacies of epitaxial processes. Customizable to meet distinct specifications and preferences, our offering delivers an individually tailored solution that seamlessly fits your unique operational needs. We offer a range of customization options, from size alterations to variations in the coating application, equipping us to engineer and supply a product capable of enhancing performance across various application scenarios. We at Semicorex are dedicated to manufacturing and supplying high-performance Plates for Epitaxial Growth that fuse quality with cost-efficiency.
    • PSS Etching Carrier Tray for Wafer Processing

      PSS Etching Carrier Tray for Wafer Processing

      Semicorex's PSS Etching Carrier Tray for Wafer Processing is specifically designed for the demanding epitaxy equipment applications. Our ultra-pure graphite carrier is ideal for thin-film deposition phases like MOCVD, epitaxy susceptors, pancake or satellite platforms, and wafer handling processing such as etching. The PSS Etching Carrier Tray for Wafer Processing has high heat and corrosion resistance, excellent heat distribution properties, and a high thermal conductivity. Our products are cost-effective and have a good price advantage. We cater to many European and American markets and look forward to becoming your long-term partner in China.
    • SiC Wafer Chuck

      SiC Wafer Chuck

      Semicorex SiC Wafer Chuck stands as a pinnacle of innovation in semiconductor manufacturing, serving as a crucial component in the intricate process of semiconductor fabrication. Crafted with meticulous precision and cutting-edge technology, this chuck plays an indispensable role in supporting and stabilizing silicon carbide (SiC) wafers during various stages of production. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
    • SiC O Ring

      SiC O Ring

      Semicorex SiC O Ring is highly valued in a range of industries for their exceptional sealing capabilities and material properties. Its use spans applications where extreme conditions such as high temperatures, aggressive chemicals, mechanical stress, and stringent cleanliness are routine.**
    • Monocrystalline Silicon Epitaxial Susceptor

      Monocrystalline Silicon Epitaxial Susceptor

      Perfect for graphite epitaxy and wafer handling process, Semicorex ultra-pure Monocrystalline Silicon Epitaxial Susceptor ensure minimal contamination and provide exceptionally long life performance. Our products have a good price advantage and cover many of the European and American markets. We look forward to becoming your long-term partner in China.
    • Quartz Injector

      Quartz Injector

      Semicorex Quartz Injector stands as a pivotal component within the intricate realm of semiconductor manufacturing. As an indispensable apparatus, it facilitates the precise delivery of essential materials and gases vital for the fabrication of semiconductor devices. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
    • Related Blog
    • Reviews

    • Can you grind silicon carbide?

      Silicon carbide (SiC) has important applications in areas such as power electronics, high-frequency RF devices, and sensors for high-temperature-resistant environments due to its excellent physicochemical properties. However, the slicing operation during SiC wafer processing introduces damages on the surface, which, if left untreated, can expand during the subsequent epitaxial growth process and form epitaxial defects, thus affecting the yield of the device.

    • Oxidation in Semiconductor Processing

      Oxidation processes play a critical role in preventing such problems by creating a protective layer on the wafer, known as the oxide layer, which acts as a barrier between different chemicals.

    • Silicon Carbide(SiC) Crystal Growth Furnace

      Crystal growth is the core link in the production of Silicon Carbide substrates, and the core equipment is the crystal growth furnace. Similar to traditional crystalline silicon-grade crystal growth furnaces, the furnace structure is not very complex and mainly consists of a furnace body, a heating system, a coil transmission mechanism, a vacuum acquisition and measurement system, a gas path system, a cooling system, a control system, etc., among which Thermal field and process conditions determine the quality, size, conductive properties and other key indicators of Silicon Carbide crystals.

    • What is porous graphite?

      Porous graphite, also known as porous carbon or porous graphite material, is a graphite form that has been specially engineered to have an interconnected network of pores or voids within its structure.

    • What is P-type SiC wafer?

      A P-type silicon carbide (SiC) wafer is a semiconductor substrate that is doped with impurities to create a P-type (positive) conductivity. Silicon carbide is a wide-bandgap semiconductor material that offers exceptional electrical and thermal properties, making it suitable for high-power and high-temperature electronic devices.

    • Difficulties in GaN preparation

      As a third-generation semiconductor material, Gallium Nitride is often compared with Silicon Carbide. Gallium Nitride still demonstrates its superiority with its large bandgap, high breakdown voltage, high thermal conductivity, high saturated electron drift velocity and strong radiation resistance. But it is undeniable that, like Silicon Carbide, Gallium Nitride also has various technical difficulties.

    Send Inquiry

    Hit enter to search or ESC to close
    X
    We use cookies to offer you a better browsing experience, analyze site traffic and personalize content. By using this site, you agree to our use of cookies. Privacy Policy
    Reject Accept