English
Home > Products > wafer lithography

China wafer lithography Manufacturers, Suppliers, Factory

We're going to make each individual work being remarkable and ideal, and accelerate our steps for standing during the rank of worldwide top-grade and high-tech enterprises for wafer lithography,dummy wafer,silicon carbide wafer manufacturers,sic epi wafers,test wafer, Welcome all nice buyers communicate details of products and ideas with us!!
wafer lithography, To keep the leading position in our industry, we never stop challenging the limitation in all aspects to create the ideal products. In his way, We can enrich our life style and promote a better living environment for the global community.

Related Products

Hot Products

  • SiC Ceramic Cantilever Paddle

    SiC Ceramic Cantilever Paddle

    Large wafer loading force silicon carbide SiC ceramic cantilever paddle is suitable for a robot automatic loading and handling system because it has stable performance, non-deformation in high temperature and large wafer loading force. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • Second Half Parts for Lower Baffles in Epitaxial Process

    Second Half Parts for Lower Baffles in Epitaxial Process

    Semicorex Second Half Parts for Lower Baffles in Epitaxial Process, meticulously engineered components designed to revolutionize the performance of your semiconductor devices. Specifically tailored for the intake system of LPE reactors, these semi-cylindrical fittings play a pivotal role in enhancing the epitaxial growth process. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • Solid SiC Etching Ring

    Solid SiC Etching Ring

    You can rest assured to buy Solid SiC Etching Ring from our factory. Semicorex provide high-quality reinforced carbon-carbon composite with customized service. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • TaC-coated Halfmoon

    TaC-coated Halfmoon

    Semicorex TaC-coated Halfmoon offers compelling advantages in the epitaxial growth of silicon carbide (SiC) for power electronics and RF applications. This material combination addresses critical challenges in SiC epitaxy, enabling higher wafer quality, improved process efficiency, and reduced manufacturing costs. We at Semicorex are dedicated to manufacturing and supplying high-performance TaC-coated Halfmoon that fuses quality with cost-efficiency.**
  • CCB Brakes with Coating

    CCB Brakes with Coating

    Semicorex Carbon Ceramic Composite CCB Brakes with Coating represent the cutting edge of high-performance braking technology, combining the exceptional thermal and mechanical properties of carbon–ceramic materials with the advanced protection and durability offered by specialized surface coatings. Choosing Semicorex means selecting reliability, precision, and superior performance under the most demanding conditions—where consistent braking power, long lifespan, and safety are non-negotiable.*
  • Customized porous ceramic chuck

    Customized porous ceramic chuck

    Customized porous ceramic chuck is the superior workpiece clamping and fixing solution designed exclusively for semiconductor manufacturing. Selecting Semicorex means you will benefit from reliable quality, customization services and increased productivity.
  • Related Blog
  • Reviews

  • CVD process for SiC wafer epitaxy

    The CVD process for SiC wafer epitaxy involves the deposition of SiC films onto a SiC substrate using a gas-phase reaction. The SiC precursor gases, typically methyltrichlorosilane (MTS) and ethylene (C2H4), are introduced into a reaction chamber where the SiC substrate is heated to a high temperature (usually between 1400 and 1600 degrees Celsius) under a controlled atmosphere of hydrogen (H2).

  • MOCVD is the key equipment

  • What is cantilever paddles?

    The wafer boats, loaded with a batch of wafers to be processed, are positioned on long cantilevered paddles.

  • Differences between SiC crystals with different structures

    Silicon carbide (SiC) is a material that possesses exceptional thermal, physical and chemical stability, exhibiting properties that go beyond those of conventional materials. Its thermal conductivity is an astonishing 84W/(m·K), which is not only higher than copper but also three times that of silicon. This demonstrates its enormous potential for use in thermal management applications.

  • Applications of TaC Coated Graphite Components

    In the process of growing SiC and AlN single crystals by the physical vapor transport method (PVT), components such as the crucible, seed crystal holder and guide ring play a vital role. During the preparation process of SiC, the seed crystal is located in a relatively low temperature region, while the raw material is in a high temperature region exceeding 2400°C. The raw materials decompose at high temperatures to form SiXCy (including Si, SiC₂, Si₂C and other components).

  • The significance of porous graphite materials to SiC crystal growth

    Semicorex's SiC crystal growth furnace component, the porous graphite barrel, will bring three major benefits and can effectively strengthen the competitiveness of domestic SiC substrates:

Send Inquiry

Hit enter to search or ESC to close
X
We use cookies to offer you a better browsing experience, analyze site traffic and personalize content. By using this site, you agree to our use of cookies. Privacy Policy
Reject Accept