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The application areas of SiC-based and Si-based GaN are not strictly separated. In GaN-On-SiC devices, the cost of SiC substrate is relatively high, and with the growing maturity of SiC long crystal technology, the cost of the device is expected to fall further, and it is used in power devices in the field of power electronics.

Silicon carbide (SiC), as a wide bandgap semiconductor material, offers unparalleled advantages in high-power, high-temperature, and high-frequency applications.

The Silicon Carbide (SiC) production process encompasses the preparation of substrate and epitaxy from the materials side, followed by chip design and manufacturing, device packaging, and finally, distribution to downstream application markets. Among these stages, substrate material processing is the most challenging aspect of the SiC industry. SiC substrates are both hard and brittle, making cutting, grinding, and polishing extremely difficult. This increases the likelihood of defects during processing and reduces the yield rate. Currently, major international SiC manufacturers are planning to transition from 6-inch to 8-inch SiC wafers. Overcoming the challenges associated with 8-inch substrates has become a critical benchmark for the SiC industry. This article will introduce the key parameters of SiC substrates.

Common thin films are mainly divided into three categories: semiconductor thin films, dielectric thin films, and metal/metal compound thin films.

As a leading upstream graphite material manufacturer in the semiconductor industry, Semicorex prioritizes the availability, usability, and durability of its materials, setting the standard for excellence in the field.

Compared with the PVT method, the liquid phase method for growing SiC has the following advantages: