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China sin substrate Electric Vehicles Manufacturers, Suppliers, Factory

Semicorex has been producing sin substrate Electric Vehicles for many years and is one of the professional sin substrate Electric Vehicles manufacturers and Suppliers in China. Once you buy our advanced and durable products which supply bulk packing, we guarantee the large quantity in quick delivery. Over the years, we have provided customers with customized service. Customers are satisfied with our products and excellent service. We sincerely look forward to becoming your reliable long-term business partner! Welcome to buy products from our factory.

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  • SiC Boat for Wafer Handling

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    Crafted from a silicon carbide of exceptional purity, the Semicorex SiC Boat for Wafer Handling boasts a construction that includes precision slots to secure the wafers, mitigating any movement during operational procedures. The choice of silicon carbide as the material ensures not only hardness and resilience but also the capability to endure elevated temperatures and exposure to chemicals. This makes the SiC Boat for Wafer Handling a pivotal component in a multitude of semiconductor production stages, such as the cultivation of crystals, diffusion, ion implantation, and etching processes.
  • SiC Epi-Wafer Susceptor

    SiC Epi-Wafer Susceptor

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  • Porous Graphite Materials for Single Crystal SiC Growth Applications

    Porous Graphite Materials for Single Crystal SiC Growth Applications

    Semicorex Porous Graphite Materials for Single Crystal SiC Growth Applications, is a specialized material used in the semiconductor processing. This crucial piece of equipment plays a pivotal role on the quality of single crystal SiC. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • Metallic Shower Head

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    The Metallic Shower head, known as a gas distribution plate or gas shower head, is a critical component extensively utilized in semiconductor manufacturing processes.Its primary function is to evenly distribute gases into a reaction chamber, ensuring that semiconductor materials come into uniform contact with process gases.**
  • 3C-SiC Wafer Substrate

    3C-SiC Wafer Substrate

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    In traditional silicon power device fabrication, high-temperature diffusion and ion implantation stand as the primary methods for dopant control, each with its advantages and disadvantages. Typically, high-temperature diffusion is characterized by its simplicity, cost-effectiveness, isotropic dopant distribution profiles, and lower introduction of lattice damage. Conversely, ion implantation, though complex and costly, enables precise independent control over dopant concentration and depth but introduces a significant number of point defects and extended defects into the substrate.

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    Silicon wafer surface polishing is a crucial process in semiconductor manufacturing. Its primary goal is to achieve extremely high standards of surface flatness and roughness by removing micro-defects, layers of stress damage, and contamination from impurities such as metal ions.

  • The Study on the Distribution of Electrical Resistivity in n-Type 4H-SiC Crystals

    4H-SiC, as a third-generation semiconductor material, is renowned for its wide bandgap, high thermal conductivity, and excellent chemical and thermal stability, making it highly valuable in high-power and high-frequency applications.

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