China sic silicon carbide Manufacturers, Suppliers, Factory

By 2027, solar photovoltaic (PV) will overtake coal as the world's largest installed capacity. The cumulative installed capacity of solar PV nearly triples in our forecast, growing by nearly 1,500 gigawatts over this period, and will surpass natural gas by 2026 and coal by 2027.

The development of 3C-SiC, a significant polytype of silicon carbide, reflects the continuous advancement of semiconductor material science. In the 1980s, Nishino et al. first achieved a 4 μm thick 3C-SiC film on a silicon substrate using chemical vapor deposition (CVD)[1], laying the foundation for 3C-SiC thin-film technology.

In the semiconductor industry, epitaxial layers play a crucial role by forming specific single-crystal thin films atop a wafer substrate, collectively known as epitaxial wafers. Particularly, silicon carbide (SiC) epitaxial layers grown on conductive SiC substrates produce homogenous SiC epitaxial wafers, which are instrumental in the fabrication of power devices such as Schottky diodes, MOSFETs, and IGBTs, with 4H-SiC substrates being the most widely utilized.

As a wide-bandgap (WBG) semiconductor material, SiC's wider energy difference gives it higher thermal and electronic properties compared to traditional Si. This feature enables power devices to operate at higher temperatures, frequencies and voltages.

Chemical vapor deposition CVD refers to the introduction of two or more gaseous raw materials into a reaction chamber under vacuum and high temperature conditions, where the gaseous raw materials react with each other to form a new material, which is deposited on the wafer surface.

The Silicon Carbide (SiC) production process encompasses the preparation of substrate and epitaxy from the materials side, followed by chip design and manufacturing, device packaging, and finally, distribution to downstream application markets. Among these stages, substrate material processing is the most challenging aspect of the SiC industry. SiC substrates are both hard and brittle, making cutting, grinding, and polishing extremely difficult. This increases the likelihood of defects during processing and reduces the yield rate. Currently, major international SiC manufacturers are planning to transition from 6-inch to 8-inch SiC wafers. Overcoming the challenges associated with 8-inch substrates has become a critical benchmark for the SiC industry. This article will introduce the key parameters of SiC substrates.