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    • China equipment sic silicon carbide Manufacturers, Suppliers, Factory

    Semicorex has been producing equipment sic silicon carbide for many years and is one of the professional equipment sic silicon carbide manufacturers and Suppliers in China. Once you buy our advanced and durable products which supply bulk packing, we guarantee the large quantity in quick delivery. Over the years, we have provided customers with customized service. Customers are satisfied with our products and excellent service. We sincerely look forward to becoming your reliable long-term business partner! Welcome to buy products from our factory.

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    • SiC Coating Graphite Substrate Wafer Carriers for MOCVD

      SiC Coating Graphite Substrate Wafer Carriers for MOCVD

      You can rest assured to buy SiC Coating Graphite Substrate Wafer Carriers for MOCVD from our factory. At Semicorex, we are a large-scale manufacturer and supplier of SiC Coated Graphite Susceptor in China. Our product has a good price advantage and covers many of the European and American markets. We strive to provide our customers with high-quality products that meet their specific requirements. Our SiC Coating Graphite Substrate Wafer Carrier for MOCVD is an excellent choice for those looking for a high-performance carrier for their semiconductor manufacturing process.
    • Semiconductor Wafer Carrier for MOCVD Equipment

      Semiconductor Wafer Carrier for MOCVD Equipment

      You can rest assured to buy Semiconductor Wafer Carrier for MOCVD Equipment from our factory. Semiconductor wafer carriers are an essential component of MOCVD equipment. They are used to transport and protect semiconductor wafers during the manufacturing process. Semiconductor Wafer Carriers for MOCVD Equipment are made of high-purity materials and are designed to maintain the integrity of the wafers during processing.
    • Crucibles for Crystal Growth

      Crucibles for Crystal Growth

      Semicorex Crucibles for Crystal Growth are indispensable in achieving controlled single-crystal growth, fundamental for semiconductor device manufacturing. These crucibles are meticulously designed to fulfill the rigorous standards of the semiconductor sector, ensuring peak performance and efficiency across all applications. We at Semicorex are dedicated to manufacturing and supplying high-performance Crucibles for Crystal Growth that fuse quality with cost-efficiency.
    • Silicon Wafer

      Silicon Wafer

      Semicorex silicon wafer is a thin, circular slice of silicon crystal used in the fabrication of integrated circuits and other microdevices. Typically, these wafers are produced through a meticulous process involving growing a single crystal ingot of high-purity silicon and then precisely slicing it into thin discs. Silicon wafers serve as the fundamental substrate upon which semiconductor devices are built. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
    • SiC Wafer Tray

      SiC Wafer Tray

      The Semicorex SiC Wafer Tray is a vital asset in the Metal-Organic Chemical Vapor Deposition (MOCVD) process, meticulously designed to support and heat semiconductor wafers during the essential step of epitaxial layer deposition. This tray is integral to semiconductor device manufacturing, where the precision of layer growth is of utmost importance. We at Semicorex are dedicated to manufacturing and supplying high-performance SiC Wafer Tray that fuse quality with cost-efficiency.
    • Planetary Disk

      Planetary Disk

      Semicorex Planetary Disk, silicon carbide coated graphite wafer susceptor or carrier designed for Molecular Beam Epitaxy (MBE) processes within Metal-Organic Chemical Vapor Deposition (MOCVD) furnaces. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
    • Related Blog
    • Reviews

    • Dry Etching vs Wet Etching

      In semiconductor fabrication, etching is one of the major steps, along with photolithography and thin-film deposition. It involves removing unwanted materials from the surface of a wafer using chemical or physical methods. This step is carried out after coating, photolithography, and developing. It is used to remove the exposed thin film material, leaving only the desired portion of the wafer, and then removing the excess photoresist. These steps are repeated numerous times to create complex integrated circuits.

    • What is the process of isostatic graphite manufacturing?

      The process of isostatic graphite manufacturing is Selecting raw materials, Blending, Molding, Isostatic pressing, Carbonization, Graphitization. 

    • CVD process for SiC wafer epitaxy

      The CVD process for SiC wafer epitaxy involves the deposition of SiC films onto a SiC substrate using a gas-phase reaction. The SiC precursor gases, typically methyltrichlorosilane (MTS) and ethylene (C2H4), are introduced into a reaction chamber where the SiC substrate is heated to a high temperature (usually between 1400 and 1600 degrees Celsius) under a controlled atmosphere of hydrogen (H2).

    • Applications of TaC Coated Graphite Components

      In the process of growing SiC and AlN single crystals by the physical vapor transport method (PVT), components such as the crucible, seed crystal holder and guide ring play a vital role. During the preparation process of SiC, the seed crystal is located in a relatively low temperature region, while the raw material is in a high temperature region exceeding 2400°C. The raw materials decompose at high temperatures to form SiXCy (including Si, SiC₂, Si₂C and other components).

    • Monocrystalline Silicon Manufacturing

      The three primary methods used in monocrystalline silicon manufacturing are the Czochralski (CZ) method, the Kyropoulos method, and the Float Zone (FZ) method.

    • Method of GaN Crystal Growth

      When producing large-sized GaN single crystal substrates, HVPE is currently the best choice for commercialization. However, the back carrier concentration of the grown GaN cannot be precisely controlled.

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